Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon), permits better heat dissipation and allows better cooling and temperature management. Though many...

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Bibliographic Details
Main Authors: Sofiane Khachroumi, Hervé Morel, Tarek Ben Salah
Format: Article
Language:English
Published: MDPI AG 2010-01-01
Series:Sensors
Subjects:
silicon carbide
SiC-JFET sensor
modelling
design parameters
Online Access:http://www.mdpi.com/1424-8220/10/1/388/

Internet

http://www.mdpi.com/1424-8220/10/1/388/

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