Effect of sintering conditions on colossal dielectric properties of (Tb1/2Nb1/2)0.01Ti0.99O2 ceramics

In this study, we investigated various sintering temperatures (1200 °C−1450 °C) and durations (2–6 h) conditions for preparing (Tb _1/2 Nb _1/2 ) _0.01 Ti _0.99 O _2 (TNTO) ceramics. By employing high sintering temperatures (≥1350 °C) and extended sintering durations (≥4 h), we successfully achieved...

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Main Authors: Noppakorn Thanamoon, Prasit Thongbai
Format: Article
Language:English
Published: IOP Publishing 2023-01-01
Series:Materials Research Express
Subjects:
Online Access:https://doi.org/10.1088/2053-1591/ad06fe
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author Noppakorn Thanamoon
Prasit Thongbai
author_facet Noppakorn Thanamoon
Prasit Thongbai
author_sort Noppakorn Thanamoon
collection DOAJ
description In this study, we investigated various sintering temperatures (1200 °C−1450 °C) and durations (2–6 h) conditions for preparing (Tb _1/2 Nb _1/2 ) _0.01 Ti _0.99 O _2 (TNTO) ceramics. By employing high sintering temperatures (≥1350 °C) and extended sintering durations (≥4 h), we successfully achieved ultra–high dielectric permittivity values ( ε ′ ∼ 2.2 − 4.1 × 10 ^4 ) and remarkably low loss tangent values (∼0.025−0.079). Remarkably, the temperature coefficient of the TNTO ceramic, sintered at 1350 °C, exhibited exceptional stability, maintaining a value of approximately 15% even at 200 °C. Additionally, we examined the phase structure and microstructure of the TNTO ceramics to gain insights into their colossal permittivity (CP) behavior. The analysis revealed the presence of rutile TiO _2 and TbNbTiO _6 phases, and the ceramics exhibited a high–density microstructure under high–temperature sintering conditions. The impedance spectroscopy analysis revealed that the primary contributor to the observed CP behavior was the interfacial polarization mechanism. The observed increase in the ε ′ value, correlated with the enlargement of the average grain size, can be attributed to the effect of the internal barrier layer capacitor. However, when the sintering time ≥4 h, the grain size did not significantly affect the ε ′ value, possibly due to reaching the maximum capacity of electron production for the interfacial polarization process (i.e., the maximum intensity of polarizability). This study provides valuable insights into optimizing the sintering conditions for TNTO ceramics and related compounds, laying the groundwork for the development of a new CP oxide suitable for practical applications.
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spelling doaj.art-12ced8ffd0704107887ed1c8678209f32023-11-06T11:56:54ZengIOP PublishingMaterials Research Express2053-15912023-01-01101111630110.1088/2053-1591/ad06feEffect of sintering conditions on colossal dielectric properties of (Tb1/2Nb1/2)0.01Ti0.99O2 ceramicsNoppakorn Thanamoon0https://orcid.org/0000-0003-2259-6397Prasit Thongbai1https://orcid.org/0000-0001-7658-6165Giant Dielectric and Computational Design Research Group (GD–CDR), Institute of Nanomaterials Research and Innovation for Energy (IN–RIE), Department of Physics, Faculty of Science, Khon Kaen University , Khon Kaen 40002, ThailandGiant Dielectric and Computational Design Research Group (GD–CDR), Institute of Nanomaterials Research and Innovation for Energy (IN–RIE), Department of Physics, Faculty of Science, Khon Kaen University , Khon Kaen 40002, ThailandIn this study, we investigated various sintering temperatures (1200 °C−1450 °C) and durations (2–6 h) conditions for preparing (Tb _1/2 Nb _1/2 ) _0.01 Ti _0.99 O _2 (TNTO) ceramics. By employing high sintering temperatures (≥1350 °C) and extended sintering durations (≥4 h), we successfully achieved ultra–high dielectric permittivity values ( ε ′ ∼ 2.2 − 4.1 × 10 ^4 ) and remarkably low loss tangent values (∼0.025−0.079). Remarkably, the temperature coefficient of the TNTO ceramic, sintered at 1350 °C, exhibited exceptional stability, maintaining a value of approximately 15% even at 200 °C. Additionally, we examined the phase structure and microstructure of the TNTO ceramics to gain insights into their colossal permittivity (CP) behavior. The analysis revealed the presence of rutile TiO _2 and TbNbTiO _6 phases, and the ceramics exhibited a high–density microstructure under high–temperature sintering conditions. The impedance spectroscopy analysis revealed that the primary contributor to the observed CP behavior was the interfacial polarization mechanism. The observed increase in the ε ′ value, correlated with the enlargement of the average grain size, can be attributed to the effect of the internal barrier layer capacitor. However, when the sintering time ≥4 h, the grain size did not significantly affect the ε ′ value, possibly due to reaching the maximum capacity of electron production for the interfacial polarization process (i.e., the maximum intensity of polarizability). This study provides valuable insights into optimizing the sintering conditions for TNTO ceramics and related compounds, laying the groundwork for the development of a new CP oxide suitable for practical applications.https://doi.org/10.1088/2053-1591/ad06fecolossal permittivityTiO2impedance spectroscopytemperature coefficientIBLCsintering effect
spellingShingle Noppakorn Thanamoon
Prasit Thongbai
Effect of sintering conditions on colossal dielectric properties of (Tb1/2Nb1/2)0.01Ti0.99O2 ceramics
Materials Research Express
colossal permittivity
TiO2
impedance spectroscopy
temperature coefficient
IBLC
sintering effect
title Effect of sintering conditions on colossal dielectric properties of (Tb1/2Nb1/2)0.01Ti0.99O2 ceramics
title_full Effect of sintering conditions on colossal dielectric properties of (Tb1/2Nb1/2)0.01Ti0.99O2 ceramics
title_fullStr Effect of sintering conditions on colossal dielectric properties of (Tb1/2Nb1/2)0.01Ti0.99O2 ceramics
title_full_unstemmed Effect of sintering conditions on colossal dielectric properties of (Tb1/2Nb1/2)0.01Ti0.99O2 ceramics
title_short Effect of sintering conditions on colossal dielectric properties of (Tb1/2Nb1/2)0.01Ti0.99O2 ceramics
title_sort effect of sintering conditions on colossal dielectric properties of tb1 2nb1 2 0 01ti0 99o2 ceramics
topic colossal permittivity
TiO2
impedance spectroscopy
temperature coefficient
IBLC
sintering effect
url https://doi.org/10.1088/2053-1591/ad06fe
work_keys_str_mv AT noppakornthanamoon effectofsinteringconditionsoncolossaldielectricpropertiesoftb12nb12001ti099o2ceramics
AT prasitthongbai effectofsinteringconditionsoncolossaldielectricpropertiesoftb12nb12001ti099o2ceramics