Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories
A methodology to estimate the device temperature in resistive random access memories (RRAMs) is presented. Unipolar devices, which are known to be highly influenced by thermal effects in their resistive switching operation, are employed to develop the technique. A 3D RRAM simulator is used to fit ex...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-03-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/3/630 |
| _version_ | 1797610043708801024 |
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| author | Cristina Aguilera-Pedregosa David Maldonado Mireia B. González Enrique Moreno Francisco Jiménez-Molinos Francesca Campabadal Juan B. Roldán |
| author_facet | Cristina Aguilera-Pedregosa David Maldonado Mireia B. González Enrique Moreno Francisco Jiménez-Molinos Francesca Campabadal Juan B. Roldán |
| author_sort | Cristina Aguilera-Pedregosa |
| collection | DOAJ |
| description | A methodology to estimate the device temperature in resistive random access memories (RRAMs) is presented. Unipolar devices, which are known to be highly influenced by thermal effects in their resistive switching operation, are employed to develop the technique. A 3D RRAM simulator is used to fit experimental data and obtain the maximum and average temperatures of the conductive filaments (CFs) that are responsible for the switching behavior. It is found that the experimental CFs temperature corresponds to the maximum simulated temperatures obtained at the narrowest sections of the CFs. These temperature values can be used to improve compact models for circuit simulation purposes. |
| first_indexed | 2024-03-11T06:08:59Z |
| format | Article |
| id | doaj.art-1338e058353642fbb4a3c980ffa18c56 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-11T06:08:59Z |
| publishDate | 2023-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-1338e058353642fbb4a3c980ffa18c562023-11-17T12:43:29ZengMDPI AGMicromachines2072-666X2023-03-0114363010.3390/mi14030630Thermal Characterization of Conductive Filaments in Unipolar Resistive MemoriesCristina Aguilera-Pedregosa0David Maldonado1Mireia B. González2Enrique Moreno3Francisco Jiménez-Molinos4Francesca Campabadal5Juan B. Roldán6Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada, SpainDepartamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada, SpainInstitut de Microelectrònica de Barcelona, IMB-CNM (CSIC), Carrer dels Til·lers s/n, Campus UAB, 08193 Bellaterra, SpainDepartamento de Física y Matemáticas, Facultad de Ciencias, Universidad de Alcalá, Pl. de San Diego s/n, Alcalá de Henares, 28801 Madrid, SpainDepartamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada, SpainInstitut de Microelectrònica de Barcelona, IMB-CNM (CSIC), Carrer dels Til·lers s/n, Campus UAB, 08193 Bellaterra, SpainDepartamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada, SpainA methodology to estimate the device temperature in resistive random access memories (RRAMs) is presented. Unipolar devices, which are known to be highly influenced by thermal effects in their resistive switching operation, are employed to develop the technique. A 3D RRAM simulator is used to fit experimental data and obtain the maximum and average temperatures of the conductive filaments (CFs) that are responsible for the switching behavior. It is found that the experimental CFs temperature corresponds to the maximum simulated temperatures obtained at the narrowest sections of the CFs. These temperature values can be used to improve compact models for circuit simulation purposes.https://www.mdpi.com/2072-666X/14/3/630resistive switching memoryRRAMtemperature characterizationsimulationvariabilitymodeling |
| spellingShingle | Cristina Aguilera-Pedregosa David Maldonado Mireia B. González Enrique Moreno Francisco Jiménez-Molinos Francesca Campabadal Juan B. Roldán Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories Micromachines resistive switching memory RRAM temperature characterization simulation variability modeling |
| title | Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories |
| title_full | Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories |
| title_fullStr | Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories |
| title_full_unstemmed | Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories |
| title_short | Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories |
| title_sort | thermal characterization of conductive filaments in unipolar resistive memories |
| topic | resistive switching memory RRAM temperature characterization simulation variability modeling |
| url | https://www.mdpi.com/2072-666X/14/3/630 |
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