Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories

Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories

A methodology to estimate the device temperature in resistive random access memories (RRAMs) is presented. Unipolar devices, which are known to be highly influenced by thermal effects in their resistive switching operation, are employed to develop the technique. A 3D RRAM simulator is used to fit ex...

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Bibliographic Details
Main Authors:	Cristina Aguilera-Pedregosa, David Maldonado, Mireia B. González, Enrique Moreno, Francisco Jiménez-Molinos, Francesca Campabadal, Juan B. Roldán
Format:	Article
Language:	English
Published:	MDPI AG 2023-03-01
Series:	Micromachines
Subjects:	resistive switching memory RRAM temperature characterization simulation variability modeling
Online Access:	https://www.mdpi.com/2072-666X/14/3/630

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