Ni doping induced property enhancement in laser ablated BaSnO3 films suitable for optoelectronic applications
Pulsed laser deposition is a straightforward approach for preparing films with superconducting to dielectric properties with atomic layer precision. The deep-seated mechanisms involved in the particle transport from target to substrate and subsequent film formation still need to be fully comprehende...
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Elsevier
2024-03-01
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| Series: | Heliyon |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2405844024027191 |
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| author | Jibi John S. Suresh M. Sivakumar K.G. Gopchandran V.P. Mahadevan Pillai |
| author_facet | Jibi John S. Suresh M. Sivakumar K.G. Gopchandran V.P. Mahadevan Pillai |
| author_sort | Jibi John |
| collection | DOAJ |
| description | Pulsed laser deposition is a straightforward approach for preparing films with superconducting to dielectric properties with atomic layer precision. The deep-seated mechanisms involved in the particle transport from target to substrate and subsequent film formation still need to be fully comprehended. This manuscript reports the property enhancement observed in laser ablated perovskite BaSnO3 films with Ni doping. Films' crystallinity improvement is observed, and an intensity enhancement of 1150% is observed on 3 mol% Ni-doping. The optimum Ni-doping concentration in BaSnO3 is found to be 3 mol%. Herein, Ni-doped BaSnO3 films deposited by PLD showed an unusual increase in film thickness (i.e., from 615 nm in the pure film to 1317 nm in the film with 7 mol% Ni-doping as revealed by lateral SEM analysis and spectroscopic ellipsometry). We propose an “Induced Magnetic field-assisted Particle Convergence (IMPC)” effect for this superficial growth enhancement. The film's optical properties are modified with an increased nickel doping level, and the bandgap energy shows renormalization. All the films show excellent transmittance (80–90%) in the Vis.-NIR region. Hall-effect measurement reveals the increased carrier concentration by three orders (2.98 × 1011 to 3.50 × 1014 cm−3). In addition, the enhancement in mobility from 3.13 to 20.93 cm2V−1s−1 and a decrease in electrical resistivity by six orders (i.e., from 4.05 × 109 to 1.13 × 103 Ω cm) are observed on 7 mol% Ni doping. XPS measurements reveals that the Ba, Sn and Ni ions are at 2+, 4+ and 2+ oxidation states. Using spectroscopic ellipsometric method, we estimated the optical constants of the films, the refractive index, dielectric constant, and extinction coefficient show a normal dispersion behavior. The high crystallinity, high transmittance, suitable surface topography, and improved electrical performances of the Ni-doped BaSnO3 films make them excellent candidates for optoelectronic devices and solar cells. |
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| institution | Directory Open Access Journal |
| issn | 2405-8440 |
| language | English |
| last_indexed | 2024-04-24T23:15:49Z |
| publishDate | 2024-03-01 |
| publisher | Elsevier |
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| series | Heliyon |
| spelling | doaj.art-1364bd56fc974f39aef5c12fafb9fffe2024-03-17T07:56:00ZengElsevierHeliyon2405-84402024-03-01105e26688Ni doping induced property enhancement in laser ablated BaSnO3 films suitable for optoelectronic applicationsJibi John0S. Suresh1M. Sivakumar2K.G. Gopchandran3V.P. Mahadevan Pillai4Department of Optoelectronics, University of Kerala, Thiruvananthapuram, Kerala, IndiaDepartment of Optoelectronics, University of Kerala, Thiruvananthapuram, Kerala, India; Department of Electronics, SreeAyyappa College, Chengannur, Kerala, IndiaDepartment of Physics, Amrita School of Physical Sciences, Coimbatore, Amrita Vishwa Vidyapeetham, IndiaDepartment of Optoelectronics, University of Kerala, Thiruvananthapuram, Kerala, IndiaDepartment of Optoelectronics, University of Kerala, Thiruvananthapuram, Kerala, India; Department of Physics, Amrita School of Physical Sciences, Coimbatore, Amrita Vishwa Vidyapeetham, India; Corresponding author. Department of Optoelectronics, University of Kerala, Thiruvananthapuram, Kerala, India.Pulsed laser deposition is a straightforward approach for preparing films with superconducting to dielectric properties with atomic layer precision. The deep-seated mechanisms involved in the particle transport from target to substrate and subsequent film formation still need to be fully comprehended. This manuscript reports the property enhancement observed in laser ablated perovskite BaSnO3 films with Ni doping. Films' crystallinity improvement is observed, and an intensity enhancement of 1150% is observed on 3 mol% Ni-doping. The optimum Ni-doping concentration in BaSnO3 is found to be 3 mol%. Herein, Ni-doped BaSnO3 films deposited by PLD showed an unusual increase in film thickness (i.e., from 615 nm in the pure film to 1317 nm in the film with 7 mol% Ni-doping as revealed by lateral SEM analysis and spectroscopic ellipsometry). We propose an “Induced Magnetic field-assisted Particle Convergence (IMPC)” effect for this superficial growth enhancement. The film's optical properties are modified with an increased nickel doping level, and the bandgap energy shows renormalization. All the films show excellent transmittance (80–90%) in the Vis.-NIR region. Hall-effect measurement reveals the increased carrier concentration by three orders (2.98 × 1011 to 3.50 × 1014 cm−3). In addition, the enhancement in mobility from 3.13 to 20.93 cm2V−1s−1 and a decrease in electrical resistivity by six orders (i.e., from 4.05 × 109 to 1.13 × 103 Ω cm) are observed on 7 mol% Ni doping. XPS measurements reveals that the Ba, Sn and Ni ions are at 2+, 4+ and 2+ oxidation states. Using spectroscopic ellipsometric method, we estimated the optical constants of the films, the refractive index, dielectric constant, and extinction coefficient show a normal dispersion behavior. The high crystallinity, high transmittance, suitable surface topography, and improved electrical performances of the Ni-doped BaSnO3 films make them excellent candidates for optoelectronic devices and solar cells.http://www.sciencedirect.com/science/article/pii/S2405844024027191Perovskite oxideBaSnO3 filmsPulsed laser depositionRefractive indexInduced magnetic field-assisted particle convergence effectBandgap renormalization |
| spellingShingle | Jibi John S. Suresh M. Sivakumar K.G. Gopchandran V.P. Mahadevan Pillai Ni doping induced property enhancement in laser ablated BaSnO3 films suitable for optoelectronic applications Heliyon Perovskite oxide BaSnO3 films Pulsed laser deposition Refractive index Induced magnetic field-assisted particle convergence effect Bandgap renormalization |
| title | Ni doping induced property enhancement in laser ablated BaSnO3 films suitable for optoelectronic applications |
| title_full | Ni doping induced property enhancement in laser ablated BaSnO3 films suitable for optoelectronic applications |
| title_fullStr | Ni doping induced property enhancement in laser ablated BaSnO3 films suitable for optoelectronic applications |
| title_full_unstemmed | Ni doping induced property enhancement in laser ablated BaSnO3 films suitable for optoelectronic applications |
| title_short | Ni doping induced property enhancement in laser ablated BaSnO3 films suitable for optoelectronic applications |
| title_sort | ni doping induced property enhancement in laser ablated basno3 films suitable for optoelectronic applications |
| topic | Perovskite oxide BaSnO3 films Pulsed laser deposition Refractive index Induced magnetic field-assisted particle convergence effect Bandgap renormalization |
| url | http://www.sciencedirect.com/science/article/pii/S2405844024027191 |
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