SiC Doping Impact during Conducting AFM under Ambient Atmosphere

SiC Doping Impact during Conducting AFM under Ambient Atmosphere

The characterization of silicon carbide (SiC) by specific electrical atomic force microscopy (AFM) modes is highly appreciated for revealing its structure and properties at a nanoscale. However, during the conductive AFM (C-AFM) measurements, the strong electric field that builds up around and below...

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Bibliographic Details
Main Authors: Christina Villeneuve-Faure, Abdelhaq Boumaarouf, Vishal Shah, Peter M. Gammon, Ulrike Lüders, Rosine Coq Germanicus
Format: Article
Language:English
Published: MDPI AG 2023-08-01
Series:Materials
Subjects:
local oxidation
atomic force microscopy
C-AFM
doping
successive AFM characterizations
doped silicon carbide
Online Access:https://www.mdpi.com/1996-1944/16/15/5401

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