On the prospect of identifying visible emissions from optical measurements of self-assembled QDs

The work presented here focuses on the optical properties of molecular beam epitaxy-grown self-organized InAs quantum dots (QDs). Under low excitation power densities, the photoluminescence (PL) spectrum of the structure under study exhibits a double-peak profile, which has been related to the optic...

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Main Authors: Jawher Rayhani, Mehrez Oueslati, Radhwen Chtourou
Format: Article
Language:English
Published: Elsevier 2023-09-01
Series:Results in Materials
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2590048X23000821
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author Jawher Rayhani
Mehrez Oueslati
Radhwen Chtourou
author_facet Jawher Rayhani
Mehrez Oueslati
Radhwen Chtourou
author_sort Jawher Rayhani
collection DOAJ
description The work presented here focuses on the optical properties of molecular beam epitaxy-grown self-organized InAs quantum dots (QDs). Under low excitation power densities, the photoluminescence (PL) spectrum of the structure under study exhibits a double-peak profile, which has been related to the optical emission from the dots. To properly argue for or against explaining a high energy peak as being the result of different-sized QDs or excited state emissions, a comparative study of the optical properties of a set of two grown QD samples was employed. The laser power dependence of the linearity of the PL intensities of the QD transitions was shown to be very useful in determining the possible origins of the PL sub-bands detectable in a double-peak emission from an ensemble of self-organized QDs. Indeed, the change in the linearity of the dot-luminescence intensity with the increase of the excitation density could give helpful information about the active confinement states from which the dots are emitting. On the other hand, despite the use of very low excitation power densities, the optical measurements of the studied structure have revealed an appearance of a PL signal relating to the radiative emission from the first excited state of the dots. A random pathway of carrier capture by the intrinsic levels of the QDs is thought to be the most likely cause of this aspect.
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spelling doaj.art-13971d16bb534636871a4a45850132442023-09-16T05:31:36ZengElsevierResults in Materials2590-048X2023-09-0119100444On the prospect of identifying visible emissions from optical measurements of self-assembled QDsJawher Rayhani0Mehrez Oueslati1Radhwen Chtourou2Laboratoire de Photovoltaïque de Semiconducteurs et de Nanostructures, Centre de Recherche des Sciences et Technologie de l’Energie, BP. 95, Hammam-Lif, 2050, Tunisia; Corresponding author.Laboratoire de Nanomatériaux, Nanotechnologie et Energie (L2NE), Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092, Tunis, TunisiaLaboratoire de Photovoltaïque de Semiconducteurs et de Nanostructures, Centre de Recherche des Sciences et Technologie de l’Energie, BP. 95, Hammam-Lif, 2050, TunisiaThe work presented here focuses on the optical properties of molecular beam epitaxy-grown self-organized InAs quantum dots (QDs). Under low excitation power densities, the photoluminescence (PL) spectrum of the structure under study exhibits a double-peak profile, which has been related to the optical emission from the dots. To properly argue for or against explaining a high energy peak as being the result of different-sized QDs or excited state emissions, a comparative study of the optical properties of a set of two grown QD samples was employed. The laser power dependence of the linearity of the PL intensities of the QD transitions was shown to be very useful in determining the possible origins of the PL sub-bands detectable in a double-peak emission from an ensemble of self-organized QDs. Indeed, the change in the linearity of the dot-luminescence intensity with the increase of the excitation density could give helpful information about the active confinement states from which the dots are emitting. On the other hand, despite the use of very low excitation power densities, the optical measurements of the studied structure have revealed an appearance of a PL signal relating to the radiative emission from the first excited state of the dots. A random pathway of carrier capture by the intrinsic levels of the QDs is thought to be the most likely cause of this aspect.http://www.sciencedirect.com/science/article/pii/S2590048X23000821Quantum dotsSpectroscopic measurementsSemiconductor compoundsLinearity of the PL intensityMicroscopic measurements
spellingShingle Jawher Rayhani
Mehrez Oueslati
Radhwen Chtourou
On the prospect of identifying visible emissions from optical measurements of self-assembled QDs
Results in Materials
Quantum dots
Spectroscopic measurements
Semiconductor compounds
Linearity of the PL intensity
Microscopic measurements
title On the prospect of identifying visible emissions from optical measurements of self-assembled QDs
title_full On the prospect of identifying visible emissions from optical measurements of self-assembled QDs
title_fullStr On the prospect of identifying visible emissions from optical measurements of self-assembled QDs
title_full_unstemmed On the prospect of identifying visible emissions from optical measurements of self-assembled QDs
title_short On the prospect of identifying visible emissions from optical measurements of self-assembled QDs
title_sort on the prospect of identifying visible emissions from optical measurements of self assembled qds
topic Quantum dots
Spectroscopic measurements
Semiconductor compounds
Linearity of the PL intensity
Microscopic measurements
url http://www.sciencedirect.com/science/article/pii/S2590048X23000821
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AT radhwenchtourou ontheprospectofidentifyingvisibleemissionsfromopticalmeasurementsofselfassembledqds