Universal selective transfer printing via micro-vacuum force
Abstract Transfer printing of inorganic thin-film semiconductors has attracted considerable attention to realize high-performance soft electronics on unusual substrates. However, conventional transfer technologies including elastomeric transfer printing, laser-assisted transfer, and electrostatic tr...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2023-11-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-023-43342-8 |
| _version_ | 1797388181028470784 |
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| author | Sang Hyun Park Tae Jin Kim Han Eol Lee Boo Soo Ma Myoung Song Min Seo Kim Jung Ho Shin Seung Hyung Lee Jae Hee Lee Young Bin Kim Ki Yun Nam Hong-Jin Park Taek-Soo Kim Keon Jae Lee |
| author_facet | Sang Hyun Park Tae Jin Kim Han Eol Lee Boo Soo Ma Myoung Song Min Seo Kim Jung Ho Shin Seung Hyung Lee Jae Hee Lee Young Bin Kim Ki Yun Nam Hong-Jin Park Taek-Soo Kim Keon Jae Lee |
| author_sort | Sang Hyun Park |
| collection | DOAJ |
| description | Abstract Transfer printing of inorganic thin-film semiconductors has attracted considerable attention to realize high-performance soft electronics on unusual substrates. However, conventional transfer technologies including elastomeric transfer printing, laser-assisted transfer, and electrostatic transfer still have challenging issues such as stamp reusability, additional adhesives, and device damage. Here, a micro-vacuum assisted selective transfer is reported to assemble micro-sized inorganic semiconductors onto unconventional substrates. 20 μm-sized micro-hole arrays are formed via laser-induced etching technology on a glass substrate. The vacuum controllable module, consisting of a laser-drilled glass and hard-polydimethylsiloxane micro-channels, enables selective modulation of micro-vacuum suction force on microchip arrays. Ultrahigh adhesion switchability of 3.364 × 106, accomplished by pressure control during the micro-vacuum transfer procedure, facilitates the pick-up and release of thin-film semiconductors without additional adhesives and chip damage. Heterogeneous integration of III-V materials and silicon is demonstrated by assembling microchips with diverse shapes and sizes from different mother wafers on the same plane. Multiple selective transfers are implemented by independent pressure control of two separate vacuum channels with a high transfer yield of 98.06%. Finally, flexible micro light-emitting diodes and transistors with uniform electrical/optical properties are fabricated via micro-vacuum assisted selective transfer. |
| first_indexed | 2024-03-08T22:37:03Z |
| format | Article |
| id | doaj.art-13bbfd9e93b9440babfea12d06a79f90 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-03-08T22:37:03Z |
| publishDate | 2023-11-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-13bbfd9e93b9440babfea12d06a79f902023-12-17T12:23:02ZengNature PortfolioNature Communications2041-17232023-11-0114111110.1038/s41467-023-43342-8Universal selective transfer printing via micro-vacuum forceSang Hyun Park0Tae Jin Kim1Han Eol Lee2Boo Soo Ma3Myoung Song4Min Seo Kim5Jung Ho Shin6Seung Hyung Lee7Jae Hee Lee8Young Bin Kim9Ki Yun Nam10Hong-Jin Park11Taek-Soo Kim12Keon Jae Lee13Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST)Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST)Division of Advanced Materials Engineering, Jeonbuk National UniversityDepartment of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST)Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST)Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST)Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST)Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST)Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST)Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST)Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST)BSP Co., Ltd., 41-4Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST)Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST)Abstract Transfer printing of inorganic thin-film semiconductors has attracted considerable attention to realize high-performance soft electronics on unusual substrates. However, conventional transfer technologies including elastomeric transfer printing, laser-assisted transfer, and electrostatic transfer still have challenging issues such as stamp reusability, additional adhesives, and device damage. Here, a micro-vacuum assisted selective transfer is reported to assemble micro-sized inorganic semiconductors onto unconventional substrates. 20 μm-sized micro-hole arrays are formed via laser-induced etching technology on a glass substrate. The vacuum controllable module, consisting of a laser-drilled glass and hard-polydimethylsiloxane micro-channels, enables selective modulation of micro-vacuum suction force on microchip arrays. Ultrahigh adhesion switchability of 3.364 × 106, accomplished by pressure control during the micro-vacuum transfer procedure, facilitates the pick-up and release of thin-film semiconductors without additional adhesives and chip damage. Heterogeneous integration of III-V materials and silicon is demonstrated by assembling microchips with diverse shapes and sizes from different mother wafers on the same plane. Multiple selective transfers are implemented by independent pressure control of two separate vacuum channels with a high transfer yield of 98.06%. Finally, flexible micro light-emitting diodes and transistors with uniform electrical/optical properties are fabricated via micro-vacuum assisted selective transfer.https://doi.org/10.1038/s41467-023-43342-8 |
| spellingShingle | Sang Hyun Park Tae Jin Kim Han Eol Lee Boo Soo Ma Myoung Song Min Seo Kim Jung Ho Shin Seung Hyung Lee Jae Hee Lee Young Bin Kim Ki Yun Nam Hong-Jin Park Taek-Soo Kim Keon Jae Lee Universal selective transfer printing via micro-vacuum force Nature Communications |
| title | Universal selective transfer printing via micro-vacuum force |
| title_full | Universal selective transfer printing via micro-vacuum force |
| title_fullStr | Universal selective transfer printing via micro-vacuum force |
| title_full_unstemmed | Universal selective transfer printing via micro-vacuum force |
| title_short | Universal selective transfer printing via micro-vacuum force |
| title_sort | universal selective transfer printing via micro vacuum force |
| url | https://doi.org/10.1038/s41467-023-43342-8 |
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