Parametric simulations of composite barrier FTJs under external bias at room temperature

A study on a parametrized model of a composite barrier ferroelectric tunneling junction (FTJ), three-interface system with a non-polar dielectric layer, under an external bias voltage, Va, and at room temperature, using Finite Element Method-based simulations, has been performed. The approach involv...

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Main Authors: Catalin Tibeica, Titus Sandu, Oana Nedelcu, Rodica Plugaru, Neculai Plugaru
Format: Article
Language:English
Published: Elsevier 2023-04-01
Series:Results in Physics
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379723001432
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author Catalin Tibeica
Titus Sandu
Oana Nedelcu
Rodica Plugaru
Neculai Plugaru
author_facet Catalin Tibeica
Titus Sandu
Oana Nedelcu
Rodica Plugaru
Neculai Plugaru
author_sort Catalin Tibeica
collection DOAJ
description A study on a parametrized model of a composite barrier ferroelectric tunneling junction (FTJ), three-interface system with a non-polar dielectric layer, under an external bias voltage, Va, and at room temperature, using Finite Element Method-based simulations, has been performed. The approach involves the Thomas–Fermi model assuming incomplete screening of polarization charges for building the energy barrier profile, and numerically simulates the electron transport through the barrier by bias-voltage-dependent tunneling, using Tsu-Esaki formulation. That naturally includes the temperature dependent contributions to the total current density. The tunneling electroresistance ratio (TER) and current densities are computed considering variations of a large set of parameters that describe the composite barrier system in realistic physical range of values with respect to a reference (prototypical) system. In this study, the parametric simulations were performed starting from selected data reported on the SrRuO3/SrTiO3/BaTiO3/SrRuO3 heterostructure. The most important results of our work can be stated as follows: (i) The simulations prove to be a reliable approach when we are interested in the prediction of FTJ characteristics at temperatures close to 300 K, and (ii) We show that several configurations with large TER values can be predicted, but at the expense of low current densities in the ON state. We suggest that the results may be useful for assessing the FTJ performances at ambient temperature, as well as to design preoptimized FTJs by using different combinations of materials to comply with a set of properties of a specific model.
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spelling doaj.art-13c51be924c042a382828bab311b2df12023-04-05T08:12:28ZengElsevierResults in Physics2211-37972023-04-0147106350Parametric simulations of composite barrier FTJs under external bias at room temperatureCatalin Tibeica0Titus Sandu1Oana Nedelcu2Rodica Plugaru3Neculai Plugaru4National Institute for Research and Development in Microtechnologies (IMT - Bucharest), 126A, Erou Iancu Nicolae Street, Voluntari, Ilfov, 077190, RomaniaNational Institute for Research and Development in Microtechnologies (IMT - Bucharest), 126A, Erou Iancu Nicolae Street, Voluntari, Ilfov, 077190, RomaniaNational Institute for Research and Development in Microtechnologies (IMT - Bucharest), 126A, Erou Iancu Nicolae Street, Voluntari, Ilfov, 077190, RomaniaNational Institute for Research and Development in Microtechnologies (IMT - Bucharest), 126A, Erou Iancu Nicolae Street, Voluntari, Ilfov, 077190, RomaniaCorresponding author.; National Institute for Research and Development in Microtechnologies (IMT - Bucharest), 126A, Erou Iancu Nicolae Street, Voluntari, Ilfov, 077190, RomaniaA study on a parametrized model of a composite barrier ferroelectric tunneling junction (FTJ), three-interface system with a non-polar dielectric layer, under an external bias voltage, Va, and at room temperature, using Finite Element Method-based simulations, has been performed. The approach involves the Thomas–Fermi model assuming incomplete screening of polarization charges for building the energy barrier profile, and numerically simulates the electron transport through the barrier by bias-voltage-dependent tunneling, using Tsu-Esaki formulation. That naturally includes the temperature dependent contributions to the total current density. The tunneling electroresistance ratio (TER) and current densities are computed considering variations of a large set of parameters that describe the composite barrier system in realistic physical range of values with respect to a reference (prototypical) system. In this study, the parametric simulations were performed starting from selected data reported on the SrRuO3/SrTiO3/BaTiO3/SrRuO3 heterostructure. The most important results of our work can be stated as follows: (i) The simulations prove to be a reliable approach when we are interested in the prediction of FTJ characteristics at temperatures close to 300 K, and (ii) We show that several configurations with large TER values can be predicted, but at the expense of low current densities in the ON state. We suggest that the results may be useful for assessing the FTJ performances at ambient temperature, as well as to design preoptimized FTJs by using different combinations of materials to comply with a set of properties of a specific model.http://www.sciencedirect.com/science/article/pii/S2211379723001432FerroelectricsElectron transportFEMFTJ
spellingShingle Catalin Tibeica
Titus Sandu
Oana Nedelcu
Rodica Plugaru
Neculai Plugaru
Parametric simulations of composite barrier FTJs under external bias at room temperature
Results in Physics
Ferroelectrics
Electron transport
FEM
FTJ
title Parametric simulations of composite barrier FTJs under external bias at room temperature
title_full Parametric simulations of composite barrier FTJs under external bias at room temperature
title_fullStr Parametric simulations of composite barrier FTJs under external bias at room temperature
title_full_unstemmed Parametric simulations of composite barrier FTJs under external bias at room temperature
title_short Parametric simulations of composite barrier FTJs under external bias at room temperature
title_sort parametric simulations of composite barrier ftjs under external bias at room temperature
topic Ferroelectrics
Electron transport
FEM
FTJ
url http://www.sciencedirect.com/science/article/pii/S2211379723001432
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AT oananedelcu parametricsimulationsofcompositebarrierftjsunderexternalbiasatroomtemperature
AT rodicaplugaru parametricsimulationsofcompositebarrierftjsunderexternalbiasatroomtemperature
AT neculaiplugaru parametricsimulationsofcompositebarrierftjsunderexternalbiasatroomtemperature