Optimization of CMP processing parameters for Si based on response surface method
To improve the polishing efficiency and precision, the optimum processing parameters of Si in the chemical mechanical polishing (CMP) process were analysed by CMP experiments and response surface methodology. The results show that polishing pressure has the largest influence on the material removal...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd.
2022-12-01
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| Series: | Jin'gangshi yu moliao moju gongcheng |
| Subjects: | |
| Online Access: | http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2022.0081 |
| _version_ | 1797635791148548096 |
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| author | Da BIAN Enmin SONG Zifeng NI Shanhua QIAN Yongwu ZHAO |
| author_facet | Da BIAN Enmin SONG Zifeng NI Shanhua QIAN Yongwu ZHAO |
| author_sort | Da BIAN |
| collection | DOAJ |
| description | To improve the polishing efficiency and precision, the optimum processing parameters of Si in the chemical mechanical polishing (CMP) process were analysed by CMP experiments and response surface methodology. The results show that polishing pressure has the largest influence on the material removal rate and surface roughness of Si polishing. The second largest influential factor is polishing rotational speed and the third is polishing fluid flow rate. The prediction models of material removal rate and surface roughness are established. The optimum processing parameters are obtained when the polishing pressure is 48.3 kPa, polishing rotational speed is 70 r/min and polishing fluid flow rate is 65 mL/min with the prediction models and by experiments. With these processing parameters, the material removal rate and surface roughness are 1 058.2 nm/min and 0.771 nm, respectively. |
| first_indexed | 2024-03-11T12:26:21Z |
| format | Article |
| id | doaj.art-13d1af4ab52e402c912a85f4821456f7 |
| institution | Directory Open Access Journal |
| issn | 1006-852X |
| language | zho |
| last_indexed | 2024-03-11T12:26:21Z |
| publishDate | 2022-12-01 |
| publisher | Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd. |
| record_format | Article |
| series | Jin'gangshi yu moliao moju gongcheng |
| spelling | doaj.art-13d1af4ab52e402c912a85f4821456f72023-11-06T08:41:01ZzhoZhengzhou Research Institute for Abrasives & Grinding Co., Ltd.Jin'gangshi yu moliao moju gongcheng1006-852X2022-12-0142674575210.13394/j.cnki.jgszz.2022.0081202206-zbb-biandaOptimization of CMP processing parameters for Si based on response surface methodDa BIAN0Enmin SONG1Zifeng NI2Shanhua QIAN3Yongwu ZHAO4School of Mechanical Engineering, Jiangnan University, Wuxi 214122, Jiangsu, ChinaSchool of Mechanical Engineering, Jiangnan University, Wuxi 214122, Jiangsu, ChinaSchool of Mechanical Engineering, Jiangnan University, Wuxi 214122, Jiangsu, ChinaSchool of Mechanical Engineering, Jiangnan University, Wuxi 214122, Jiangsu, ChinaSchool of Mechanical Engineering, Jiangnan University, Wuxi 214122, Jiangsu, ChinaTo improve the polishing efficiency and precision, the optimum processing parameters of Si in the chemical mechanical polishing (CMP) process were analysed by CMP experiments and response surface methodology. The results show that polishing pressure has the largest influence on the material removal rate and surface roughness of Si polishing. The second largest influential factor is polishing rotational speed and the third is polishing fluid flow rate. The prediction models of material removal rate and surface roughness are established. The optimum processing parameters are obtained when the polishing pressure is 48.3 kPa, polishing rotational speed is 70 r/min and polishing fluid flow rate is 65 mL/min with the prediction models and by experiments. With these processing parameters, the material removal rate and surface roughness are 1 058.2 nm/min and 0.771 nm, respectively.http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2022.0081chemical mechanical polishing (cmp)siliconresponse surface methodmaterial removal ratesurface roughness |
| spellingShingle | Da BIAN Enmin SONG Zifeng NI Shanhua QIAN Yongwu ZHAO Optimization of CMP processing parameters for Si based on response surface method Jin'gangshi yu moliao moju gongcheng chemical mechanical polishing (cmp) silicon response surface method material removal rate surface roughness |
| title | Optimization of CMP processing parameters for Si based on response surface method |
| title_full | Optimization of CMP processing parameters for Si based on response surface method |
| title_fullStr | Optimization of CMP processing parameters for Si based on response surface method |
| title_full_unstemmed | Optimization of CMP processing parameters for Si based on response surface method |
| title_short | Optimization of CMP processing parameters for Si based on response surface method |
| title_sort | optimization of cmp processing parameters for si based on response surface method |
| topic | chemical mechanical polishing (cmp) silicon response surface method material removal rate surface roughness |
| url | http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2022.0081 |
| work_keys_str_mv | AT dabian optimizationofcmpprocessingparametersforsibasedonresponsesurfacemethod AT enminsong optimizationofcmpprocessingparametersforsibasedonresponsesurfacemethod AT zifengni optimizationofcmpprocessingparametersforsibasedonresponsesurfacemethod AT shanhuaqian optimizationofcmpprocessingparametersforsibasedonresponsesurfacemethod AT yongwuzhao optimizationofcmpprocessingparametersforsibasedonresponsesurfacemethod |