Optimization of CMP processing parameters for Si based on response surface method

Optimization of CMP processing parameters for Si based on response surface method

To improve the polishing efficiency and precision, the optimum processing parameters of Si in the chemical mechanical polishing (CMP) process were analysed by CMP experiments and response surface methodology. The results show that polishing pressure has the largest influence on the material removal...

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Bibliographic Details
Main Authors: Da BIAN, Enmin SONG, Zifeng NI, Shanhua QIAN, Yongwu ZHAO
Format: Article
Language:zho
Published: Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd. 2022-12-01
Series:Jin'gangshi yu moliao moju gongcheng
Subjects:
chemical mechanical polishing (cmp)
silicon
response surface method
material removal rate
surface roughness
Online Access:http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2022.0081

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