Uniaxial Strain Dependence on Angle-Resolved Optical Second Harmonic Generation from a Few Layers of Indium Selenide
Indium selenide (InSe) is an emerging van der Waals material, which exhibits the potential to serve in excellent electronic and optoelectronic devices. One of the advantages of layered materials is their application to flexible devices. How strain alters the electronic and optical properties is, thu...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-02-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/4/750 |
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| author | Zi-Yi Li Hao-Yu Cheng Sheng-Hsun Kung Hsuan-Chun Yao Christy Roshini Paul Inbaraj Raman Sankar Min-Nan Ou Yang-Fang Chen Chi-Cheng Lee Kung-Hsuan Lin |
| author_facet | Zi-Yi Li Hao-Yu Cheng Sheng-Hsun Kung Hsuan-Chun Yao Christy Roshini Paul Inbaraj Raman Sankar Min-Nan Ou Yang-Fang Chen Chi-Cheng Lee Kung-Hsuan Lin |
| author_sort | Zi-Yi Li |
| collection | DOAJ |
| description | Indium selenide (InSe) is an emerging van der Waals material, which exhibits the potential to serve in excellent electronic and optoelectronic devices. One of the advantages of layered materials is their application to flexible devices. How strain alters the electronic and optical properties is, thus, an important issue. In this work, we experimentally measured the strain dependence on the angle-resolved second harmonic generation (SHG) pattern of a few layers of InSe. We used the exfoliation method to fabricate InSe flakes and measured the SHG images of the flakes with different azimuthal angles. We found the SHG intensity of InSe decreased, while the compressive strain increased. Through first–principles electronic structure calculations, we investigated the strain dependence on SHG susceptibilities and the corresponding angle-resolved SHG pattern. The experimental data could be fitted well by the calculated results using only a fitting parameter. The demonstrated method based on first–principles in this work can be used to quantitatively model the strain-induced angle-resolved SHG patterns in 2D materials. Our obtained results are very useful for the exploration of the physical properties of flexible devices based on 2D materials. |
| first_indexed | 2024-03-11T08:19:35Z |
| format | Article |
| id | doaj.art-13d5b629af924f7595e975195b8f180b |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T08:19:35Z |
| publishDate | 2023-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-13d5b629af924f7595e975195b8f180b2023-11-16T22:28:24ZengMDPI AGNanomaterials2079-49912023-02-0113475010.3390/nano13040750Uniaxial Strain Dependence on Angle-Resolved Optical Second Harmonic Generation from a Few Layers of Indium SelenideZi-Yi Li0Hao-Yu Cheng1Sheng-Hsun Kung2Hsuan-Chun Yao3Christy Roshini Paul Inbaraj4Raman Sankar5Min-Nan Ou6Yang-Fang Chen7Chi-Cheng Lee8Kung-Hsuan Lin9Institute of Physics, Academia Sinica, Taipei 115201, TaiwanInstitute of Physics, Academia Sinica, Taipei 115201, TaiwanInstitute of Physics, Academia Sinica, Taipei 115201, TaiwanInstitute of Physics, Academia Sinica, Taipei 115201, TaiwanDepartment of Physics, National Taiwan University, Taipei 10617, TaiwanInstitute of Physics, Academia Sinica, Taipei 115201, TaiwanInstitute of Physics, Academia Sinica, Taipei 115201, TaiwanDepartment of Physics, National Taiwan University, Taipei 10617, TaiwanDepartment of Physics, Tamkang University, Tamsui, New Taipei 251301, TaiwanInstitute of Physics, Academia Sinica, Taipei 115201, TaiwanIndium selenide (InSe) is an emerging van der Waals material, which exhibits the potential to serve in excellent electronic and optoelectronic devices. One of the advantages of layered materials is their application to flexible devices. How strain alters the electronic and optical properties is, thus, an important issue. In this work, we experimentally measured the strain dependence on the angle-resolved second harmonic generation (SHG) pattern of a few layers of InSe. We used the exfoliation method to fabricate InSe flakes and measured the SHG images of the flakes with different azimuthal angles. We found the SHG intensity of InSe decreased, while the compressive strain increased. Through first–principles electronic structure calculations, we investigated the strain dependence on SHG susceptibilities and the corresponding angle-resolved SHG pattern. The experimental data could be fitted well by the calculated results using only a fitting parameter. The demonstrated method based on first–principles in this work can be used to quantitatively model the strain-induced angle-resolved SHG patterns in 2D materials. Our obtained results are very useful for the exploration of the physical properties of flexible devices based on 2D materials.https://www.mdpi.com/2079-4991/13/4/750second harmonic generationstrainInSefirst–principles calculation |
| spellingShingle | Zi-Yi Li Hao-Yu Cheng Sheng-Hsun Kung Hsuan-Chun Yao Christy Roshini Paul Inbaraj Raman Sankar Min-Nan Ou Yang-Fang Chen Chi-Cheng Lee Kung-Hsuan Lin Uniaxial Strain Dependence on Angle-Resolved Optical Second Harmonic Generation from a Few Layers of Indium Selenide Nanomaterials second harmonic generation strain InSe first–principles calculation |
| title | Uniaxial Strain Dependence on Angle-Resolved Optical Second Harmonic Generation from a Few Layers of Indium Selenide |
| title_full | Uniaxial Strain Dependence on Angle-Resolved Optical Second Harmonic Generation from a Few Layers of Indium Selenide |
| title_fullStr | Uniaxial Strain Dependence on Angle-Resolved Optical Second Harmonic Generation from a Few Layers of Indium Selenide |
| title_full_unstemmed | Uniaxial Strain Dependence on Angle-Resolved Optical Second Harmonic Generation from a Few Layers of Indium Selenide |
| title_short | Uniaxial Strain Dependence on Angle-Resolved Optical Second Harmonic Generation from a Few Layers of Indium Selenide |
| title_sort | uniaxial strain dependence on angle resolved optical second harmonic generation from a few layers of indium selenide |
| topic | second harmonic generation strain InSe first–principles calculation |
| url | https://www.mdpi.com/2079-4991/13/4/750 |
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