Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductors
Indium oxide (In<sub>2</sub>O<sub>3</sub>)-based transparent conducting oxides (TCOs) have been widely used and studied for a variety of applications, such as optoelectronic devices. However, some of the more promising dopants (zirconium, hafnium, and tantalum) for this oxide...
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| Format: | Article |
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MDPI AG
2022-06-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/13/2167 |
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| author | Rita Firmino Emanuel Carlos Joana Vaz Pinto Jonas Deuermeier Rodrigo Martins Elvira Fortunato Pedro Barquinha Rita Branquinho |
| author_facet | Rita Firmino Emanuel Carlos Joana Vaz Pinto Jonas Deuermeier Rodrigo Martins Elvira Fortunato Pedro Barquinha Rita Branquinho |
| author_sort | Rita Firmino |
| collection | DOAJ |
| description | Indium oxide (In<sub>2</sub>O<sub>3</sub>)-based transparent conducting oxides (TCOs) have been widely used and studied for a variety of applications, such as optoelectronic devices. However, some of the more promising dopants (zirconium, hafnium, and tantalum) for this oxide have not received much attention, as studies have mainly focused on tin and zinc, and even fewer have been explored by solution processes. This work focuses on developing solution-combustion-processed hafnium (Hf)-doped In<sub>2</sub>O<sub>3</sub> thin films and evaluating different annealing parameters on TCO’s properties using a low environmental impact solvent. Optimized TCOs were achieved for 0.5 M% Hf-doped In<sub>2</sub>O<sub>3</sub> when produced at 400 °C, showing high transparency in the visible range of the spectrum, a bulk resistivity of 5.73 × 10<sup>−2</sup> Ω.cm, a mobility of 6.65 cm<sup>2</sup>/V.s, and a carrier concentration of 1.72 × 10<sup>19</sup> cm<sup>−3</sup>. Then, these results were improved by using rapid thermal annealing (RTA) for 10 min at 600 °C, reaching a bulk resistivity of 3.95 × 10 <sup>−3</sup> Ω.cm, a mobility of 21 cm<sup>2</sup>/V.s, and a carrier concentration of 7.98 × 10<sup>19</sup> cm<sup>−3</sup>, in air. The present work brings solution-based TCOs a step closer to low-cost optoelectronic applications. |
| first_indexed | 2024-03-09T12:42:30Z |
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| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T12:42:30Z |
| publishDate | 2022-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-13ddb942d1ba45cd8dcf286deb9bd1b72023-11-30T22:16:06ZengMDPI AGNanomaterials2079-49912022-06-011213216710.3390/nano12132167Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent ConductorsRita Firmino0Emanuel Carlos1Joana Vaz Pinto2Jonas Deuermeier3Rodrigo Martins4Elvira Fortunato5Pedro Barquinha6Rita Branquinho7CENIMAT|i3N, Department of Materials Science and CEMOP/UNINOVA, NOVA School of Science and Technology, NOVA University of Lisbon, 2829-516 Caparica, PortugalCENIMAT|i3N, Department of Materials Science and CEMOP/UNINOVA, NOVA School of Science and Technology, NOVA University of Lisbon, 2829-516 Caparica, PortugalCENIMAT|i3N, Department of Materials Science and CEMOP/UNINOVA, NOVA School of Science and Technology, NOVA University of Lisbon, 2829-516 Caparica, PortugalCENIMAT|i3N, Department of Materials Science and CEMOP/UNINOVA, NOVA School of Science and Technology, NOVA University of Lisbon, 2829-516 Caparica, PortugalCENIMAT|i3N, Department of Materials Science and CEMOP/UNINOVA, NOVA School of Science and Technology, NOVA University of Lisbon, 2829-516 Caparica, PortugalCENIMAT|i3N, Department of Materials Science and CEMOP/UNINOVA, NOVA School of Science and Technology, NOVA University of Lisbon, 2829-516 Caparica, PortugalCENIMAT|i3N, Department of Materials Science and CEMOP/UNINOVA, NOVA School of Science and Technology, NOVA University of Lisbon, 2829-516 Caparica, PortugalCENIMAT|i3N, Department of Materials Science and CEMOP/UNINOVA, NOVA School of Science and Technology, NOVA University of Lisbon, 2829-516 Caparica, PortugalIndium oxide (In<sub>2</sub>O<sub>3</sub>)-based transparent conducting oxides (TCOs) have been widely used and studied for a variety of applications, such as optoelectronic devices. However, some of the more promising dopants (zirconium, hafnium, and tantalum) for this oxide have not received much attention, as studies have mainly focused on tin and zinc, and even fewer have been explored by solution processes. This work focuses on developing solution-combustion-processed hafnium (Hf)-doped In<sub>2</sub>O<sub>3</sub> thin films and evaluating different annealing parameters on TCO’s properties using a low environmental impact solvent. Optimized TCOs were achieved for 0.5 M% Hf-doped In<sub>2</sub>O<sub>3</sub> when produced at 400 °C, showing high transparency in the visible range of the spectrum, a bulk resistivity of 5.73 × 10<sup>−2</sup> Ω.cm, a mobility of 6.65 cm<sup>2</sup>/V.s, and a carrier concentration of 1.72 × 10<sup>19</sup> cm<sup>−3</sup>. Then, these results were improved by using rapid thermal annealing (RTA) for 10 min at 600 °C, reaching a bulk resistivity of 3.95 × 10 <sup>−3</sup> Ω.cm, a mobility of 21 cm<sup>2</sup>/V.s, and a carrier concentration of 7.98 × 10<sup>19</sup> cm<sup>−3</sup>, in air. The present work brings solution-based TCOs a step closer to low-cost optoelectronic applications.https://www.mdpi.com/2079-4991/12/13/2167transparent conducting oxide (TCO)solution combustion synthesisindium oxidehafnium dopantrapid thermal annealing (RTA) |
| spellingShingle | Rita Firmino Emanuel Carlos Joana Vaz Pinto Jonas Deuermeier Rodrigo Martins Elvira Fortunato Pedro Barquinha Rita Branquinho Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductors Nanomaterials transparent conducting oxide (TCO) solution combustion synthesis indium oxide hafnium dopant rapid thermal annealing (RTA) |
| title | Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductors |
| title_full | Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductors |
| title_fullStr | Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductors |
| title_full_unstemmed | Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductors |
| title_short | Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductors |
| title_sort | solution combustion synthesis of hafnium doped indium oxide thin films for transparent conductors |
| topic | transparent conducting oxide (TCO) solution combustion synthesis indium oxide hafnium dopant rapid thermal annealing (RTA) |
| url | https://www.mdpi.com/2079-4991/12/13/2167 |
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