High Quantum Efficiency and Broadband Photodetector Based on Graphene/Silicon Nanometer Truncated Cone Arrays
Light loss is one of the main factors affecting the quantum efficiency of photodetectors. Many researchers have attempted to use various methods to improve the quantum efficiency of silicon-based photodetectors. Herein, we designed highly anti-reflective silicon nanometer truncated cone arrays (Si N...
Main Authors: | Jijie Zhao, Huan Liu, Lier Deng, Minyu Bai, Fei Xie, Shuai Wen, Weiguo Liu |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-09-01
|
Series: | Sensors |
Subjects: | |
Online Access: | https://www.mdpi.com/1424-8220/21/18/6146 |
Similar Items
-
Broadband Graphene-PbS Heterostructure Photodetector with High Responsivity
by: Xinbo Mu, et al.
Published: (2025-01-01) -
Photoresponse of Graphene Channel in Graphene-Oxide–Silicon Photodetectors
by: Kuo-Chih Lee, et al.
Published: (2023-05-01) -
Self-Powered Broadband Photodetector Based on NiO/Si Heterojunction Incorporating Graphene Transparent Conducting Layer
by: Bhishma Pandit, et al.
Published: (2024-03-01) -
Optically-Thin Broadband Graphene-Membrane Photodetector
by: Tania Moein, et al.
Published: (2020-02-01) -
Investigation of Graphene Single Layer on P-Type and N-Type Silicon Heterojunction Photodetectors
by: Carmela Bonavolontà, et al.
Published: (2024-09-01)