Increasing the ν = 5/2 gap energy: an analysis of MBE growth parameters
The fractional quantized Hall state at the filling factor ν = 5/2 is of special interest due to its possible application for quantum computing. Here we report on the optimization of growth parameters that allowed us to produce two-dimensional electron gases (2DEGs) with a 5/2 gap energy up to 135 m...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2014-01-01
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| Series: | New Journal of Physics |
| Online Access: | https://doi.org/10.1088/1367-2630/16/2/023014 |
| _version_ | 1797751486347739136 |
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| author | C Reichl J Chen S Baer C Rössler T Ihn K Ensslin W Dietsche W Wegscheider |
| author_facet | C Reichl J Chen S Baer C Rössler T Ihn K Ensslin W Dietsche W Wegscheider |
| author_sort | C Reichl |
| collection | DOAJ |
| description | The fractional quantized Hall state at the filling factor ν = 5/2 is of special interest due to its possible application for quantum computing. Here we report on the optimization of growth parameters that allowed us to produce two-dimensional electron gases (2DEGs) with a 5/2 gap energy up to 135 mK. We concentrated on optimizing the molecular beam epitaxy (MBE) growth to provide high 5/2 gap energies in ‘as-grown’ samples, without the need to enhance the 2DEGs properties by illumination or gating techniques. Our findings allow us to analyse the impact of doping in narrow quantum wells with respect to conventional DX-doping in Al _x Ga _1 _− _x As. The impact of the setback distance between doping layer and 2DEG was investigated as well. Additionally, we found a considerable increase in gap energy by reducing the amount of background impurities. To this end growth techniques like temperature reductions for substrate and effusion cells and the reduction of the Al mole fraction in the 2DEG region were applied. |
| first_indexed | 2024-03-12T16:49:15Z |
| format | Article |
| id | doaj.art-141c5773f932466ca1f0eeddbc88b772 |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:49:15Z |
| publishDate | 2014-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-141c5773f932466ca1f0eeddbc88b7722023-08-08T11:23:43ZengIOP PublishingNew Journal of Physics1367-26302014-01-0116202301410.1088/1367-2630/16/2/023014Increasing the ν = 5/2 gap energy: an analysis of MBE growth parametersC Reichl0J Chen1S Baer2C Rössler3T Ihn4K Ensslin5W Dietsche6W Wegscheider7Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, SwitzerlandMax-Planck-Institute for Solid State Research , D-70569 Stuttgart, GermanySolid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, SwitzerlandSolid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, SwitzerlandSolid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, SwitzerlandSolid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, SwitzerlandSolid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland; Max-Planck-Institute for Solid State Research , D-70569 Stuttgart, GermanySolid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, SwitzerlandThe fractional quantized Hall state at the filling factor ν = 5/2 is of special interest due to its possible application for quantum computing. Here we report on the optimization of growth parameters that allowed us to produce two-dimensional electron gases (2DEGs) with a 5/2 gap energy up to 135 mK. We concentrated on optimizing the molecular beam epitaxy (MBE) growth to provide high 5/2 gap energies in ‘as-grown’ samples, without the need to enhance the 2DEGs properties by illumination or gating techniques. Our findings allow us to analyse the impact of doping in narrow quantum wells with respect to conventional DX-doping in Al _x Ga _1 _− _x As. The impact of the setback distance between doping layer and 2DEG was investigated as well. Additionally, we found a considerable increase in gap energy by reducing the amount of background impurities. To this end growth techniques like temperature reductions for substrate and effusion cells and the reduction of the Al mole fraction in the 2DEG region were applied.https://doi.org/10.1088/1367-2630/16/2/023014 |
| spellingShingle | C Reichl J Chen S Baer C Rössler T Ihn K Ensslin W Dietsche W Wegscheider Increasing the ν = 5/2 gap energy: an analysis of MBE growth parameters New Journal of Physics |
| title | Increasing the ν = 5/2 gap energy: an analysis of MBE growth parameters |
| title_full | Increasing the ν = 5/2 gap energy: an analysis of MBE growth parameters |
| title_fullStr | Increasing the ν = 5/2 gap energy: an analysis of MBE growth parameters |
| title_full_unstemmed | Increasing the ν = 5/2 gap energy: an analysis of MBE growth parameters |
| title_short | Increasing the ν = 5/2 gap energy: an analysis of MBE growth parameters |
| title_sort | increasing the ν 5 2 gap energy an analysis of mbe growth parameters |
| url | https://doi.org/10.1088/1367-2630/16/2/023014 |
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