Temperature controlled c axis elongated low symmetry phase BiFeO3 thin film on STO substrate
BiFeO3 thin films with a mixture of tunable R-like and c axis elongated low symmetry phase (T-like phase) are fabricated on STO (001) substrate through controlling of the substrate temperature. Almost pure T-like phase can be grown on STO substrate at 600°C. Comparing with the situations on LAO (001...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2013-01-01
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Series: | AIP Advances |
Online Access: | http://link.aip.org/link/doi/10.1063/1.4789399 |
Summary: | BiFeO3 thin films with a mixture of tunable R-like and c axis elongated low symmetry phase (T-like phase) are fabricated on STO (001) substrate through controlling of the substrate temperature. Almost pure T-like phase can be grown on STO substrate at 600°C. Comparing with the situations on LAO (001), it is found that, strains from the LAO substrate may be the only reason that induces the T-like phase at higher temperatures. At lower temperatures, the island growth induced strains alone can also generate T-like phase on STO substrate. |
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ISSN: | 2158-3226 |