Temperature controlled c axis elongated low symmetry phase BiFeO3 thin film on STO substrate

BiFeO3 thin films with a mixture of tunable R-like and c axis elongated low symmetry phase (T-like phase) are fabricated on STO (001) substrate through controlling of the substrate temperature. Almost pure T-like phase can be grown on STO substrate at 600°C. Comparing with the situations on LAO (001...

Full description

Bibliographic Details
Main Authors: Peng Ren, Soon Khuen Cho, Peng Liu, Lu You, Xi Zou, Baomin Wang, Junling Wang, Lan Wang
Format: Article
Language:English
Published: AIP Publishing LLC 2013-01-01
Series:AIP Advances
Online Access:http://link.aip.org/link/doi/10.1063/1.4789399
Description
Summary:BiFeO3 thin films with a mixture of tunable R-like and c axis elongated low symmetry phase (T-like phase) are fabricated on STO (001) substrate through controlling of the substrate temperature. Almost pure T-like phase can be grown on STO substrate at 600°C. Comparing with the situations on LAO (001), it is found that, strains from the LAO substrate may be the only reason that induces the T-like phase at higher temperatures. At lower temperatures, the island growth induced strains alone can also generate T-like phase on STO substrate.
ISSN:2158-3226