Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor

Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor

In this paper, an investigation is performed to analyze the L-shaped tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV) with help of technology computer-aided design (TCAD) simulation. Depending on the gate voltage, the three variations occur in transfer curves....

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Bibliographic Details
Main Authors: Jang Hyun Kim, Hyun Woo Kim, Young Suh Song, Sangwan Kim, Garam Kim
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Micromachines
Subjects:
tunnel field-effect transistor (TFET)
L-shaped TFET
high-κ/metal gate (HKMG)
work-function variation (WFV)
band-to-band tunneling
on-state current (<i>I</i><sub>ON</sub>) variation
Online Access:https://www.mdpi.com/2072-666X/11/8/780

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