Theoretical and Experimental Analysis of Reversed Uneven Power Splitting Technique in GaN MMIC Doherty Power Amplifiers

We present a theoretical and experimental analysis of the use of a reversed uneven power splitting (RUPS) technique for asymmetric Doherty power amplifiers (PAs). The RUPS technique utilizes an uneven power splitter that drives more input power into the carrier amplifier, enabling shallow class-C op...

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Main Authors: Cheol Ho Kim, Hyeon-June Kim
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10311557/
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author Cheol Ho Kim
Hyeon-June Kim
author_facet Cheol Ho Kim
Hyeon-June Kim
author_sort Cheol Ho Kim
collection DOAJ
description We present a theoretical and experimental analysis of the use of a reversed uneven power splitting (RUPS) technique for asymmetric Doherty power amplifiers (PAs). The RUPS technique utilizes an uneven power splitter that drives more input power into the carrier amplifier, enabling shallow class-C operation of the peaking amplifier. Although the RUPS technique has played a significant role in achieving high-performance Doherty PAs, there has been a lack of comprehensive research examining the fundamental factors that contribute to its effectiveness. We conducted numerical and experimental investigations to demonstrate that the RUPS Doherty PA exhibits significant improvements in efficiency, gain, and linearity compared to conventional Doherty PAs with even power splitting (EPS). For the experiments, the EPS and RUPS networks were developed using lumped-element directional couplers. The fabricated RUPS Doherty PA, based on a 0.25- <inline-formula> <tex-math notation="LaTeX">$\mu$ </tex-math></inline-formula> m GaN HEMT monolithic microwave integrated circuit (MMIC) process, achieves superior overall performance at 2.14 GHz compared to the conventional EPS Doherty PA, without requiring any additional circuitry. The results verify that the RUPS technique can enhance the performance of asymmetric Doherty PAs.
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spelling doaj.art-14a05644af9749e5a1384d40f5ff66332023-11-15T00:01:10ZengIEEEIEEE Access2169-35362023-01-011112609812610910.1109/ACCESS.2023.333094710311557Theoretical and Experimental Analysis of Reversed Uneven Power Splitting Technique in GaN MMIC Doherty Power AmplifiersCheol Ho Kim0https://orcid.org/0000-0002-2212-1677Hyeon-June Kim1https://orcid.org/0000-0002-0516-5811Superintelligence Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon, South KoreaDepartment of Semiconductor Engineering, Seoul National University of Science and Technology, Seoul, South KoreaWe present a theoretical and experimental analysis of the use of a reversed uneven power splitting (RUPS) technique for asymmetric Doherty power amplifiers (PAs). The RUPS technique utilizes an uneven power splitter that drives more input power into the carrier amplifier, enabling shallow class-C operation of the peaking amplifier. Although the RUPS technique has played a significant role in achieving high-performance Doherty PAs, there has been a lack of comprehensive research examining the fundamental factors that contribute to its effectiveness. We conducted numerical and experimental investigations to demonstrate that the RUPS Doherty PA exhibits significant improvements in efficiency, gain, and linearity compared to conventional Doherty PAs with even power splitting (EPS). For the experiments, the EPS and RUPS networks were developed using lumped-element directional couplers. The fabricated RUPS Doherty PA, based on a 0.25- <inline-formula> <tex-math notation="LaTeX">$\mu$ </tex-math></inline-formula> m GaN HEMT monolithic microwave integrated circuit (MMIC) process, achieves superior overall performance at 2.14 GHz compared to the conventional EPS Doherty PA, without requiring any additional circuitry. The results verify that the RUPS technique can enhance the performance of asymmetric Doherty PAs.https://ieeexplore.ieee.org/document/10311557/Doherty power amplifier (Doherty PA)input power splittingdirectional couplergallium nitride (GaN)monolithic microwave integrated circuit (MMIC)long-term evolution (LTE)
spellingShingle Cheol Ho Kim
Hyeon-June Kim
Theoretical and Experimental Analysis of Reversed Uneven Power Splitting Technique in GaN MMIC Doherty Power Amplifiers
IEEE Access
Doherty power amplifier (Doherty PA)
input power splitting
directional coupler
gallium nitride (GaN)
monolithic microwave integrated circuit (MMIC)
long-term evolution (LTE)
title Theoretical and Experimental Analysis of Reversed Uneven Power Splitting Technique in GaN MMIC Doherty Power Amplifiers
title_full Theoretical and Experimental Analysis of Reversed Uneven Power Splitting Technique in GaN MMIC Doherty Power Amplifiers
title_fullStr Theoretical and Experimental Analysis of Reversed Uneven Power Splitting Technique in GaN MMIC Doherty Power Amplifiers
title_full_unstemmed Theoretical and Experimental Analysis of Reversed Uneven Power Splitting Technique in GaN MMIC Doherty Power Amplifiers
title_short Theoretical and Experimental Analysis of Reversed Uneven Power Splitting Technique in GaN MMIC Doherty Power Amplifiers
title_sort theoretical and experimental analysis of reversed uneven power splitting technique in gan mmic doherty power amplifiers
topic Doherty power amplifier (Doherty PA)
input power splitting
directional coupler
gallium nitride (GaN)
monolithic microwave integrated circuit (MMIC)
long-term evolution (LTE)
url https://ieeexplore.ieee.org/document/10311557/
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