Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer
Abstract In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al2O3‐based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature. Al2O3/IZO multilayer transparent memory has a transmittance of at leas...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2022-07-01
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| Series: | Global Challenges |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/gch2.202100118 |
| _version_ | 1818109050445889536 |
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| author | Jaemin Park Daihong Huh Soomin Son Wonjoong Kim Sucheol Ju Heon Lee |
| author_facet | Jaemin Park Daihong Huh Soomin Son Wonjoong Kim Sucheol Ju Heon Lee |
| author_sort | Jaemin Park |
| collection | DOAJ |
| description | Abstract In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al2O3‐based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature. Al2O3/IZO multilayer transparent memory has a transmittance of at least 65% in the wavelength range of 400–900 nm. In addition, the Al2O3/IZO multilayer transparent memory can achieve an electroforming voltage that is 35.7% lower than that of ITO/pure‐Al2O3/IZO transparent memory. The fabricated Al2O3/IZO multilayer transparent memory exhibits typical bipolar resistive switching behavior, regardless of the number of IZO interlayers. Also, the fabricated Al2O3/IZO multilayer transparent memory has a low operating voltage within ±1.5 V. In addition, a flexible Al2O3/IZO multilayer transparent memory is fabricated using the same process on ITO‐coated polyethylene terephthalate. The fabricated flexible transparent memory also maintains the resistive switching characteristics during the bending state. |
| first_indexed | 2024-12-11T02:25:05Z |
| format | Article |
| id | doaj.art-14bb7f61b8ed4b16801f5ace453fd3d0 |
| institution | Directory Open Access Journal |
| issn | 2056-6646 |
| language | English |
| last_indexed | 2024-12-11T02:25:05Z |
| publishDate | 2022-07-01 |
| publisher | Wiley |
| record_format | Article |
| series | Global Challenges |
| spelling | doaj.art-14bb7f61b8ed4b16801f5ace453fd3d02022-12-22T01:23:56ZengWileyGlobal Challenges2056-66462022-07-0167n/an/a10.1002/gch2.202100118Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO MultilayerJaemin Park0Daihong Huh1Soomin Son2Wonjoong Kim3Sucheol Ju4Heon Lee5Department of Materials Science and Engineering Korea University Anam‐ro 145, Seongbuk‐gu Seoul 136‐713 Republic of KoreaDepartment of Materials Science and Engineering Korea University Anam‐ro 145, Seongbuk‐gu Seoul 136‐713 Republic of KoreaDepartment of Materials Science and Engineering Korea University Anam‐ro 145, Seongbuk‐gu Seoul 136‐713 Republic of KoreaDepartment of Materials Science and Engineering Korea University Anam‐ro 145, Seongbuk‐gu Seoul 136‐713 Republic of KoreaDepartment of Materials Science and Engineering Korea University Anam‐ro 145, Seongbuk‐gu Seoul 136‐713 Republic of KoreaDepartment of Materials Science and Engineering Korea University Anam‐ro 145, Seongbuk‐gu Seoul 136‐713 Republic of KoreaAbstract In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al2O3‐based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature. Al2O3/IZO multilayer transparent memory has a transmittance of at least 65% in the wavelength range of 400–900 nm. In addition, the Al2O3/IZO multilayer transparent memory can achieve an electroforming voltage that is 35.7% lower than that of ITO/pure‐Al2O3/IZO transparent memory. The fabricated Al2O3/IZO multilayer transparent memory exhibits typical bipolar resistive switching behavior, regardless of the number of IZO interlayers. Also, the fabricated Al2O3/IZO multilayer transparent memory has a low operating voltage within ±1.5 V. In addition, a flexible Al2O3/IZO multilayer transparent memory is fabricated using the same process on ITO‐coated polyethylene terephthalate. The fabricated flexible transparent memory also maintains the resistive switching characteristics during the bending state.https://doi.org/10.1002/gch2.202100118Al 2O 3/IZO multilayerelectroformingresistive switchingtransparent memory |
| spellingShingle | Jaemin Park Daihong Huh Soomin Son Wonjoong Kim Sucheol Ju Heon Lee Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer Global Challenges Al 2O 3/IZO multilayer electroforming resistive switching transparent memory |
| title | Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer |
| title_full | Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer |
| title_fullStr | Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer |
| title_full_unstemmed | Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer |
| title_short | Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer |
| title_sort | transparent flexible and low operating voltage resistive switching memory based on al2o3 izo multilayer |
| topic | Al 2O 3/IZO multilayer electroforming resistive switching transparent memory |
| url | https://doi.org/10.1002/gch2.202100118 |
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