Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer

Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer

Abstract In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al2O3‐based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature. Al2O3/IZO multilayer transparent memory has a transmittance of at leas...

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Bibliographic Details
Main Authors:	Jaemin Park, Daihong Huh, Soomin Son, Wonjoong Kim, Sucheol Ju, Heon Lee
Format:	Article
Language:	English
Published:	Wiley 2022-07-01
Series:	Global Challenges
Subjects:	Al 2O 3/IZO multilayer electroforming resistive switching transparent memory
Online Access:	https://doi.org/10.1002/gch2.202100118

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