Effect of patterned silicon nitride substrate on Raman scattering and stress of graphene
Graphene is widely used for nano-devices due to its distinctive band structure and fascinating properties. The substrates could significantly affect the properties of graphene and related devices. In this work, we investigate the effect of surface morphology and roughness of patterned silicon nitrid...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2021-01-01
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| Series: | Materials & Design |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127520308741 |
| _version_ | 1818669487149285376 |
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| author | Daohan Ge Yuan Zhang Hui Chen Guangfu Zhen Minchang Wang Jiwei Jiao Liqiang Zhang Shining Zhu |
| author_facet | Daohan Ge Yuan Zhang Hui Chen Guangfu Zhen Minchang Wang Jiwei Jiao Liqiang Zhang Shining Zhu |
| author_sort | Daohan Ge |
| collection | DOAJ |
| description | Graphene is widely used for nano-devices due to its distinctive band structure and fascinating properties. The substrates could significantly affect the properties of graphene and related devices. In this work, we investigate the effect of surface morphology and roughness of patterned silicon nitride substrates on Raman scattering and stress of graphene. We find that the Raman scattering of graphene depend strongly on surface morphology and roughness of patterned substrates. It is concluded that the peak red-shifts in 2D and G bands was due to the strain induced by patterns with different surface morphology (holes and trenches) and roughness. Furthermore, the effects of morphology of patterned area are much greater than the role of surface roughness in the induced strain of graphene. Due to the larger surface area (about 1.65 times), the strain in the grooves is greater than in holes, in spite of greater surface roughness in holes. Our results also reveal that the effect of pattern depth should be taken into account to understand the Raman peak shift and the strain change of graphene. Our work is fundamentally important for understanding the graphene properties on dependence of surface morphology of substrates and enhancing the interfacial strength of graphene-based devices. |
| first_indexed | 2024-12-17T06:52:59Z |
| format | Article |
| id | doaj.art-14c86c4c66fe421ca0d3a3fa98aea7cd |
| institution | Directory Open Access Journal |
| issn | 0264-1275 |
| language | English |
| last_indexed | 2024-12-17T06:52:59Z |
| publishDate | 2021-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Materials & Design |
| spelling | doaj.art-14c86c4c66fe421ca0d3a3fa98aea7cd2022-12-21T21:59:31ZengElsevierMaterials & Design0264-12752021-01-01198109338Effect of patterned silicon nitride substrate on Raman scattering and stress of grapheneDaohan Ge0Yuan Zhang1Hui Chen2Guangfu Zhen3Minchang Wang4Jiwei Jiao5Liqiang Zhang6Shining Zhu7Institute of Intelligent Flexible Mechatronics, School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, PR China; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, PR China; Corresponding authors.Institute of Intelligent Flexible Mechatronics, School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, PR ChinaInstitute of Intelligent Flexible Mechatronics, School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, PR ChinaInstitute of Intelligent Flexible Mechatronics, School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, PR ChinaInstitute of Intelligent Flexible Mechatronics, School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, PR ChinaSIWAVE, Inc., Shanghai 201800, PR ChinaInstitute of Intelligent Flexible Mechatronics, School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, PR China; Jiangsu Collaborative Innovation Centre of Photovoltaic Science and Engineering, Changzhou University, Changzhou 213164, PR China; Corresponding authors.National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, PR ChinaGraphene is widely used for nano-devices due to its distinctive band structure and fascinating properties. The substrates could significantly affect the properties of graphene and related devices. In this work, we investigate the effect of surface morphology and roughness of patterned silicon nitride substrates on Raman scattering and stress of graphene. We find that the Raman scattering of graphene depend strongly on surface morphology and roughness of patterned substrates. It is concluded that the peak red-shifts in 2D and G bands was due to the strain induced by patterns with different surface morphology (holes and trenches) and roughness. Furthermore, the effects of morphology of patterned area are much greater than the role of surface roughness in the induced strain of graphene. Due to the larger surface area (about 1.65 times), the strain in the grooves is greater than in holes, in spite of greater surface roughness in holes. Our results also reveal that the effect of pattern depth should be taken into account to understand the Raman peak shift and the strain change of graphene. Our work is fundamentally important for understanding the graphene properties on dependence of surface morphology of substrates and enhancing the interfacial strength of graphene-based devices.http://www.sciencedirect.com/science/article/pii/S0264127520308741Patterned silicon nitrideGrapheneSurface morphologySurface roughnessRaman scatteringTensile strain |
| spellingShingle | Daohan Ge Yuan Zhang Hui Chen Guangfu Zhen Minchang Wang Jiwei Jiao Liqiang Zhang Shining Zhu Effect of patterned silicon nitride substrate on Raman scattering and stress of graphene Materials & Design Patterned silicon nitride Graphene Surface morphology Surface roughness Raman scattering Tensile strain |
| title | Effect of patterned silicon nitride substrate on Raman scattering and stress of graphene |
| title_full | Effect of patterned silicon nitride substrate on Raman scattering and stress of graphene |
| title_fullStr | Effect of patterned silicon nitride substrate on Raman scattering and stress of graphene |
| title_full_unstemmed | Effect of patterned silicon nitride substrate on Raman scattering and stress of graphene |
| title_short | Effect of patterned silicon nitride substrate on Raman scattering and stress of graphene |
| title_sort | effect of patterned silicon nitride substrate on raman scattering and stress of graphene |
| topic | Patterned silicon nitride Graphene Surface morphology Surface roughness Raman scattering Tensile strain |
| url | http://www.sciencedirect.com/science/article/pii/S0264127520308741 |
| work_keys_str_mv | AT daohange effectofpatternedsiliconnitridesubstrateonramanscatteringandstressofgraphene AT yuanzhang effectofpatternedsiliconnitridesubstrateonramanscatteringandstressofgraphene AT huichen effectofpatternedsiliconnitridesubstrateonramanscatteringandstressofgraphene AT guangfuzhen effectofpatternedsiliconnitridesubstrateonramanscatteringandstressofgraphene AT minchangwang effectofpatternedsiliconnitridesubstrateonramanscatteringandstressofgraphene AT jiweijiao effectofpatternedsiliconnitridesubstrateonramanscatteringandstressofgraphene AT liqiangzhang effectofpatternedsiliconnitridesubstrateonramanscatteringandstressofgraphene AT shiningzhu effectofpatternedsiliconnitridesubstrateonramanscatteringandstressofgraphene |