| Summary: | This paper presents a broadband millimeter-wave (mm-Wave) low noise amplifier (LNA) designed in a 22 nm fully depleted silicon-on-insulator (FD-SOI) CMOS technology. Electromagnetic (EM) simulations suggest that the LNA has a 3-dB bandwidth (BW) from 17.8 to 42.4 GHz and a fractional bandwidth (FBW) of 81.7%, covering the key frequency bands within the mm-Wave 5G FR2 band, with its noise figure (<i>NF</i>) ranging from 2.9 to 4.9 dB, and its input-referred 1-dB compression point (<i>IP1dB</i>) of −17.9 dBm and input-referred third-order intercept point (<i>IIP3</i>) of −8.5 dBm at 28 GHz with 15.8 mW DC power consumption (P<sub>DC</sub>). Using the FOM (figure-of-merit) developed for broadband LNAs (FOM = 20 × log((Gain[V/V] × <i>S</i><sub>21</sub>-3 dB-BW [GHz])/(P<sub>DC</sub> [mW] × (F-1)))), this LNA achieves a competitive FOM (FOM = 18.9) among reported state-of-the-art mm-Wave LNAs in the literature.
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