A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully Depleted Silicon-on-Insulator (FD-SOI) CMOS
This paper presents a broadband millimeter-wave (mm-Wave) low noise amplifier (LNA) designed in a 22 nm fully depleted silicon-on-insulator (FD-SOI) CMOS technology. Electromagnetic (EM) simulations suggest that the LNA has a 3-dB bandwidth (BW) from 17.8 to 42.4 GHz and a fractional bandwidth (FBW)...
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MDPI AG
2024-04-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/14/7/3080 |
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| author | Liang-Wei Ouyang Jill C. Mayeda Clint Sweeney Donald Y. C. Lie Jerry Lopez |
| author_facet | Liang-Wei Ouyang Jill C. Mayeda Clint Sweeney Donald Y. C. Lie Jerry Lopez |
| author_sort | Liang-Wei Ouyang |
| collection | DOAJ |
| description | This paper presents a broadband millimeter-wave (mm-Wave) low noise amplifier (LNA) designed in a 22 nm fully depleted silicon-on-insulator (FD-SOI) CMOS technology. Electromagnetic (EM) simulations suggest that the LNA has a 3-dB bandwidth (BW) from 17.8 to 42.4 GHz and a fractional bandwidth (FBW) of 81.7%, covering the key frequency bands within the mm-Wave 5G FR2 band, with its noise figure (<i>NF</i>) ranging from 2.9 to 4.9 dB, and its input-referred 1-dB compression point (<i>IP1dB</i>) of −17.9 dBm and input-referred third-order intercept point (<i>IIP3</i>) of −8.5 dBm at 28 GHz with 15.8 mW DC power consumption (P<sub>DC</sub>). Using the FOM (figure-of-merit) developed for broadband LNAs (FOM = 20 × log((Gain[V/V] × <i>S</i><sub>21</sub>-3 dB-BW [GHz])/(P<sub>DC</sub> [mW] × (F-1)))), this LNA achieves a competitive FOM (FOM = 18.9) among reported state-of-the-art mm-Wave LNAs in the literature. |
| first_indexed | 2024-04-24T10:48:29Z |
| format | Article |
| id | doaj.art-14e3d99344cc40479a7c0f18a1faa146 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-04-24T10:48:29Z |
| publishDate | 2024-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-14e3d99344cc40479a7c0f18a1faa1462024-04-12T13:15:38ZengMDPI AGApplied Sciences2076-34172024-04-01147308010.3390/app14073080A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully Depleted Silicon-on-Insulator (FD-SOI) CMOSLiang-Wei Ouyang0Jill C. Mayeda1Clint Sweeney2Donald Y. C. Lie3Jerry Lopez4Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409, USADepartment of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409, USADepartment of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409, USADepartment of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409, USADepartment of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409, USAThis paper presents a broadband millimeter-wave (mm-Wave) low noise amplifier (LNA) designed in a 22 nm fully depleted silicon-on-insulator (FD-SOI) CMOS technology. Electromagnetic (EM) simulations suggest that the LNA has a 3-dB bandwidth (BW) from 17.8 to 42.4 GHz and a fractional bandwidth (FBW) of 81.7%, covering the key frequency bands within the mm-Wave 5G FR2 band, with its noise figure (<i>NF</i>) ranging from 2.9 to 4.9 dB, and its input-referred 1-dB compression point (<i>IP1dB</i>) of −17.9 dBm and input-referred third-order intercept point (<i>IIP3</i>) of −8.5 dBm at 28 GHz with 15.8 mW DC power consumption (P<sub>DC</sub>). Using the FOM (figure-of-merit) developed for broadband LNAs (FOM = 20 × log((Gain[V/V] × <i>S</i><sub>21</sub>-3 dB-BW [GHz])/(P<sub>DC</sub> [mW] × (F-1)))), this LNA achieves a competitive FOM (FOM = 18.9) among reported state-of-the-art mm-Wave LNAs in the literature.https://www.mdpi.com/2076-3417/14/7/30805G22 nmbroadbandCMOSFD-SOILNA |
| spellingShingle | Liang-Wei Ouyang Jill C. Mayeda Clint Sweeney Donald Y. C. Lie Jerry Lopez A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully Depleted Silicon-on-Insulator (FD-SOI) CMOS Applied Sciences 5G 22 nm broadband CMOS FD-SOI LNA |
| title | A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully Depleted Silicon-on-Insulator (FD-SOI) CMOS |
| title_full | A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully Depleted Silicon-on-Insulator (FD-SOI) CMOS |
| title_fullStr | A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully Depleted Silicon-on-Insulator (FD-SOI) CMOS |
| title_full_unstemmed | A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully Depleted Silicon-on-Insulator (FD-SOI) CMOS |
| title_short | A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully Depleted Silicon-on-Insulator (FD-SOI) CMOS |
| title_sort | broadband millimeter wave 5g low noise amplifier design in 22 nm fully depleted silicon on insulator fd soi cmos |
| topic | 5G 22 nm broadband CMOS FD-SOI LNA |
| url | https://www.mdpi.com/2076-3417/14/7/3080 |
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