A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully Depleted Silicon-on-Insulator (FD-SOI) CMOS

A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully Depleted Silicon-on-Insulator (FD-SOI) CMOS

This paper presents a broadband millimeter-wave (mm-Wave) low noise amplifier (LNA) designed in a 22 nm fully depleted silicon-on-insulator (FD-SOI) CMOS technology. Electromagnetic (EM) simulations suggest that the LNA has a 3-dB bandwidth (BW) from 17.8 to 42.4 GHz and a fractional bandwidth (FBW)...

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Bibliographic Details
Main Authors:	Liang-Wei Ouyang, Jill C. Mayeda, Clint Sweeney, Donald Y. C. Lie, Jerry Lopez
Format:	Article
Language:	English
Published:	MDPI AG 2024-04-01
Series:	Applied Sciences
Subjects:	5G 22 nm broadband CMOS FD-SOI LNA
Online Access:	https://www.mdpi.com/2076-3417/14/7/3080

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