PCB-Based Current Sensor Design for Sensing Switch Current of a Nonmodular GaN Power Semiconductor
GaN-based power semiconductors exhibit small on-resistance and high dv/dt of the switch characteristics, thereby enabling the construction of high-efficiency, high-density semiconductor systems with fast switching and low power loss characteristics and miniaturization of passive devices. However, ow...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-10-01
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| Series: | Energies |
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| Online Access: | https://www.mdpi.com/1996-1073/13/19/5161 |
| _version_ | 1797551816302395392 |
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| author | Ui-Jin Kim Min-Soo Song Rae-Young Kim |
| author_facet | Ui-Jin Kim Min-Soo Song Rae-Young Kim |
| author_sort | Ui-Jin Kim |
| collection | DOAJ |
| description | GaN-based power semiconductors exhibit small on-resistance and high dv/dt of the switch characteristics, thereby enabling the construction of high-efficiency, high-density semiconductor systems with fast switching and low power loss characteristics and miniaturization of passive devices. However, owing to the characteristics of GaN devices that result in them being significantly faster than other devices, the accuracy of the switching transient response significantly affects the noise or inductance in the device. Therefore, securing sufficient sensor bandwidth is considerably important for accurate current measurement in GaN-based devices. Conversely, the current sensor in the form of a non-insulated coil must secure sufficient bandwidth and overcome the tradeoff relationship with measurement sensitivity; moreover, the sensor configuration must be applicable to various power semiconductor types. This study proposes a current sensor model that applies the principle of the printed circuit board Rogowski coil to a surface mount device-type GaN-based half-bridge structure. This structure is applicable to a nonmodular power converter and is designed to secure sufficient bandwidth with a minimum area while simultaneously exhibiting high sensitivity. For the coil design, mutual inductances with existing coil structures were compared and analyzed, and the frequency response and magnetic analysis were evaluated. Experimental verification was performed and the transient response characteristics in various DC voltage ranges are discussed. |
| first_indexed | 2024-03-10T15:51:26Z |
| format | Article |
| id | doaj.art-151187ad9115425f981e4b112e79ee54 |
| institution | Directory Open Access Journal |
| issn | 1996-1073 |
| language | English |
| last_indexed | 2024-03-10T15:51:26Z |
| publishDate | 2020-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj.art-151187ad9115425f981e4b112e79ee542023-11-20T16:00:10ZengMDPI AGEnergies1996-10732020-10-011319516110.3390/en13195161PCB-Based Current Sensor Design for Sensing Switch Current of a Nonmodular GaN Power SemiconductorUi-Jin Kim0Min-Soo Song1Rae-Young Kim2The Department of Electrical and Biomedical Engineering, Hanyang University, Seoul 04763, KoreaThe Department of Electrical and Biomedical Engineering, Hanyang University, Seoul 04763, KoreaThe Department of Electrical and Biomedical Engineering, Hanyang University, Seoul 04763, KoreaGaN-based power semiconductors exhibit small on-resistance and high dv/dt of the switch characteristics, thereby enabling the construction of high-efficiency, high-density semiconductor systems with fast switching and low power loss characteristics and miniaturization of passive devices. However, owing to the characteristics of GaN devices that result in them being significantly faster than other devices, the accuracy of the switching transient response significantly affects the noise or inductance in the device. Therefore, securing sufficient sensor bandwidth is considerably important for accurate current measurement in GaN-based devices. Conversely, the current sensor in the form of a non-insulated coil must secure sufficient bandwidth and overcome the tradeoff relationship with measurement sensitivity; moreover, the sensor configuration must be applicable to various power semiconductor types. This study proposes a current sensor model that applies the principle of the printed circuit board Rogowski coil to a surface mount device-type GaN-based half-bridge structure. This structure is applicable to a nonmodular power converter and is designed to secure sufficient bandwidth with a minimum area while simultaneously exhibiting high sensitivity. For the coil design, mutual inductances with existing coil structures were compared and analyzed, and the frequency response and magnetic analysis were evaluated. Experimental verification was performed and the transient response characteristics in various DC voltage ranges are discussed.https://www.mdpi.com/1996-1073/13/19/5161gallium nitride (GaN)current sensorRogowski coilpick-up coildouble pulse testbandwidth |
| spellingShingle | Ui-Jin Kim Min-Soo Song Rae-Young Kim PCB-Based Current Sensor Design for Sensing Switch Current of a Nonmodular GaN Power Semiconductor Energies gallium nitride (GaN) current sensor Rogowski coil pick-up coil double pulse test bandwidth |
| title | PCB-Based Current Sensor Design for Sensing Switch Current of a Nonmodular GaN Power Semiconductor |
| title_full | PCB-Based Current Sensor Design for Sensing Switch Current of a Nonmodular GaN Power Semiconductor |
| title_fullStr | PCB-Based Current Sensor Design for Sensing Switch Current of a Nonmodular GaN Power Semiconductor |
| title_full_unstemmed | PCB-Based Current Sensor Design for Sensing Switch Current of a Nonmodular GaN Power Semiconductor |
| title_short | PCB-Based Current Sensor Design for Sensing Switch Current of a Nonmodular GaN Power Semiconductor |
| title_sort | pcb based current sensor design for sensing switch current of a nonmodular gan power semiconductor |
| topic | gallium nitride (GaN) current sensor Rogowski coil pick-up coil double pulse test bandwidth |
| url | https://www.mdpi.com/1996-1073/13/19/5161 |
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