Ultra-high photo responsivity and self-powered photodetector in broad spectral range based on non-layered MnSe/WSe2 heterojunction

Due to its good p-type semiconductor characteristics, MnSe has a great application prospect in high-performance electronic and optoelectronic devices. However, heterojunctions of MnSe still need to be deeply studied to improve its electrical and photoelectric properties. Here, it is reported that th...

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Main Authors: Shuting Zhao, Xiurong Ma, Xuanhao Cao, Zehong Lei, Yibin Yang, Lili Tao, Zhaoqiang Zheng, Xing Feng, Yu Zhao
Format: Article
Language:English
Published: Frontiers Media S.A. 2023-04-01
Series:Frontiers in Materials
Subjects:
Online Access:https://www.frontiersin.org/articles/10.3389/fmats.2023.1162166/full
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author Shuting Zhao
Xiurong Ma
Xuanhao Cao
Zehong Lei
Yibin Yang
Lili Tao
Zhaoqiang Zheng
Xing Feng
Yu Zhao
author_facet Shuting Zhao
Xiurong Ma
Xuanhao Cao
Zehong Lei
Yibin Yang
Lili Tao
Zhaoqiang Zheng
Xing Feng
Yu Zhao
author_sort Shuting Zhao
collection DOAJ
description Due to its good p-type semiconductor characteristics, MnSe has a great application prospect in high-performance electronic and optoelectronic devices. However, heterojunctions of MnSe still need to be deeply studied to improve its electrical and photoelectric properties. Here, it is reported that the two-dimensional (2D) MnSe/WSe2 heterojunction is structured by the non-layered MnSe nanosheets synthesized by chemical vapor deposition (CVD) method and the mechanically exfoliated layered WSe2. The heterojunction device exhibits a rectification effect and a current on/off ratio of 6,557. Meanwhile, it has a broad spectral range response from ultraviolet (UV) to short-wave infrared radiation (SWIR) (300–2,200 nm), and achieves an ultra-high responsivity of 156 A/W, along with an excellent detectivity of 2.21 × 1012 jones, and an outstanding external quantum efficiency (EQE) of 36,400%. Moreover, the type II band alignment and the built-in potential in the MnSe/WSe2 heterojunction can facilitate the separation of the photoexcited electron-hole pairs, which enables the significant photovoltaic characteristics and self-powered photoswitching response. This work reveals the novel performance of the 2D MnSe/WSe2 heterojunction and a great potential in photoswitching, photodetector, and photovoltaic applications.
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spelling doaj.art-1537b44a53f1482fb3df40f3f4c09bc02023-04-14T05:16:48ZengFrontiers Media S.A.Frontiers in Materials2296-80162023-04-011010.3389/fmats.2023.11621661162166Ultra-high photo responsivity and self-powered photodetector in broad spectral range based on non-layered MnSe/WSe2 heterojunctionShuting ZhaoXiurong MaXuanhao CaoZehong LeiYibin YangLili TaoZhaoqiang ZhengXing FengYu ZhaoDue to its good p-type semiconductor characteristics, MnSe has a great application prospect in high-performance electronic and optoelectronic devices. However, heterojunctions of MnSe still need to be deeply studied to improve its electrical and photoelectric properties. Here, it is reported that the two-dimensional (2D) MnSe/WSe2 heterojunction is structured by the non-layered MnSe nanosheets synthesized by chemical vapor deposition (CVD) method and the mechanically exfoliated layered WSe2. The heterojunction device exhibits a rectification effect and a current on/off ratio of 6,557. Meanwhile, it has a broad spectral range response from ultraviolet (UV) to short-wave infrared radiation (SWIR) (300–2,200 nm), and achieves an ultra-high responsivity of 156 A/W, along with an excellent detectivity of 2.21 × 1012 jones, and an outstanding external quantum efficiency (EQE) of 36,400%. Moreover, the type II band alignment and the built-in potential in the MnSe/WSe2 heterojunction can facilitate the separation of the photoexcited electron-hole pairs, which enables the significant photovoltaic characteristics and self-powered photoswitching response. This work reveals the novel performance of the 2D MnSe/WSe2 heterojunction and a great potential in photoswitching, photodetector, and photovoltaic applications.https://www.frontiersin.org/articles/10.3389/fmats.2023.1162166/full2D non-layered MnSeMnSe/WSe2 heterojunctionphotodetectorself-powered photoswitchingrectification
spellingShingle Shuting Zhao
Xiurong Ma
Xuanhao Cao
Zehong Lei
Yibin Yang
Lili Tao
Zhaoqiang Zheng
Xing Feng
Yu Zhao
Ultra-high photo responsivity and self-powered photodetector in broad spectral range based on non-layered MnSe/WSe2 heterojunction
Frontiers in Materials
2D non-layered MnSe
MnSe/WSe2 heterojunction
photodetector
self-powered photoswitching
rectification
title Ultra-high photo responsivity and self-powered photodetector in broad spectral range based on non-layered MnSe/WSe2 heterojunction
title_full Ultra-high photo responsivity and self-powered photodetector in broad spectral range based on non-layered MnSe/WSe2 heterojunction
title_fullStr Ultra-high photo responsivity and self-powered photodetector in broad spectral range based on non-layered MnSe/WSe2 heterojunction
title_full_unstemmed Ultra-high photo responsivity and self-powered photodetector in broad spectral range based on non-layered MnSe/WSe2 heterojunction
title_short Ultra-high photo responsivity and self-powered photodetector in broad spectral range based on non-layered MnSe/WSe2 heterojunction
title_sort ultra high photo responsivity and self powered photodetector in broad spectral range based on non layered mnse wse2 heterojunction
topic 2D non-layered MnSe
MnSe/WSe2 heterojunction
photodetector
self-powered photoswitching
rectification
url https://www.frontiersin.org/articles/10.3389/fmats.2023.1162166/full
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