Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs
In this work, we present new evidence of the physical mechanism behind the generation of low-frequency noise with high interface-trap density by measuring the low-frequency noise magnitudes of partially depleted (PD) silicon-on-insulator (SOI) NMOSFETs as a function of irradiation dose. We measure t...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-03-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/3/602 |
| _version_ | 1797610044177514496 |
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| author | Rui Liu Linchun Gao Juanjuan Wang Tao Ni Yifan Li Runjian Wang Duoli Li Jianhui Bu Chuanbin Zeng Bo Li Jiajun Luo |
| author_facet | Rui Liu Linchun Gao Juanjuan Wang Tao Ni Yifan Li Runjian Wang Duoli Li Jianhui Bu Chuanbin Zeng Bo Li Jiajun Luo |
| author_sort | Rui Liu |
| collection | DOAJ |
| description | In this work, we present new evidence of the physical mechanism behind the generation of low-frequency noise with high interface-trap density by measuring the low-frequency noise magnitudes of partially depleted (PD) silicon-on-insulator (SOI) NMOSFETs as a function of irradiation dose. We measure the DC electrical characteristics of the devices at different irradiation doses and separate the threshold-voltage shifts caused by the oxide-trap charge and interface-trap charge. Moreover, the increased densities of the oxide-trap charge projected to the Si/SiO<sub>2</sub> interface and interface-trap charge are calculated. The results of our experiment suggest that the magnitudes of low-frequency noise do not necessarily increase with the increase in border-trap density. A novel physical explanation for the low-frequency noise in SOI-NMOSFETs with high interface-trap density is proposed. We reveal that the presence of high-density interface traps after irradiation has a repressing effect on the generation of low-frequency noise. Furthermore, the exchange of some carriers between border traps and interface traps can cause a decrease in the magnitude of low-frequency noise when the interface-trap density is high. |
| first_indexed | 2024-03-11T06:09:56Z |
| format | Article |
| id | doaj.art-153a580e3a644aa4b1b2b1c12de7b373 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-11T06:09:56Z |
| publishDate | 2023-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-153a580e3a644aa4b1b2b1c12de7b3732023-11-17T12:43:06ZengMDPI AGMicromachines2072-666X2023-03-0114360210.3390/mi14030602Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETsRui Liu0Linchun Gao1Juanjuan Wang2Tao Ni3Yifan Li4Runjian Wang5Duoli Li6Jianhui Bu7Chuanbin Zeng8Bo Li9Jiajun Luo10Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaIn this work, we present new evidence of the physical mechanism behind the generation of low-frequency noise with high interface-trap density by measuring the low-frequency noise magnitudes of partially depleted (PD) silicon-on-insulator (SOI) NMOSFETs as a function of irradiation dose. We measure the DC electrical characteristics of the devices at different irradiation doses and separate the threshold-voltage shifts caused by the oxide-trap charge and interface-trap charge. Moreover, the increased densities of the oxide-trap charge projected to the Si/SiO<sub>2</sub> interface and interface-trap charge are calculated. The results of our experiment suggest that the magnitudes of low-frequency noise do not necessarily increase with the increase in border-trap density. A novel physical explanation for the low-frequency noise in SOI-NMOSFETs with high interface-trap density is proposed. We reveal that the presence of high-density interface traps after irradiation has a repressing effect on the generation of low-frequency noise. Furthermore, the exchange of some carriers between border traps and interface traps can cause a decrease in the magnitude of low-frequency noise when the interface-trap density is high.https://www.mdpi.com/2072-666X/14/3/602low-frequency noiseionizing radiationradiation effectspartially depleted silicon-on-insulator (PDSOI)MOSFETborder trap |
| spellingShingle | Rui Liu Linchun Gao Juanjuan Wang Tao Ni Yifan Li Runjian Wang Duoli Li Jianhui Bu Chuanbin Zeng Bo Li Jiajun Luo Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs Micromachines low-frequency noise ionizing radiation radiation effects partially depleted silicon-on-insulator (PDSOI) MOSFET border trap |
| title | Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs |
| title_full | Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs |
| title_fullStr | Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs |
| title_full_unstemmed | Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs |
| title_short | Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs |
| title_sort | investigation of anomalous degradation tendency of low frequency noise in irradiated soi nmosfets |
| topic | low-frequency noise ionizing radiation radiation effects partially depleted silicon-on-insulator (PDSOI) MOSFET border trap |
| url | https://www.mdpi.com/2072-666X/14/3/602 |
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