Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs

Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs

In this work, we present new evidence of the physical mechanism behind the generation of low-frequency noise with high interface-trap density by measuring the low-frequency noise magnitudes of partially depleted (PD) silicon-on-insulator (SOI) NMOSFETs as a function of irradiation dose. We measure t...

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Bibliographic Details
Main Authors: Rui Liu, Linchun Gao, Juanjuan Wang, Tao Ni, Yifan Li, Runjian Wang, Duoli Li, Jianhui Bu, Chuanbin Zeng, Bo Li, Jiajun Luo
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Micromachines
Subjects:
low-frequency noise
ionizing radiation
radiation effects
partially depleted silicon-on-insulator (PDSOI)
MOSFET
border trap
Online Access:https://www.mdpi.com/2072-666X/14/3/602

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