A Comprehensive Study of Sn-Ga<sub>2</sub>Te<sub>3</sub>-SnTe Amorphous Alloys: Glass Formation and Crystallization Kinetics
In this paper, newly developed tellurium-based [(Ga<sub>2</sub>Te<sub>3</sub>)<sub>34</sub>(SnTe)<sub>66</sub>]<sub>100-x</sub>-Sn<sub>x</sub> amorphous alloys were prepared by the melt-spun method, with a linear velocity of 40...
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MDPI AG
2023-03-01
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| Online Access: | https://www.mdpi.com/2075-4701/13/3/532 |
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| author | Huan Zhang Yaqi Zhang Gong Li |
| author_facet | Huan Zhang Yaqi Zhang Gong Li |
| author_sort | Huan Zhang |
| collection | DOAJ |
| description | In this paper, newly developed tellurium-based [(Ga<sub>2</sub>Te<sub>3</sub>)<sub>34</sub>(SnTe)<sub>66</sub>]<sub>100-x</sub>-Sn<sub>x</sub> amorphous alloys were prepared by the melt-spun method, with a linear velocity of 40 m/s and injection pressure of 20 kPa under an Ar atmosphere. The glass-forming region was identified in the range of <i>x</i> = 0 to 10 mol%. The glass transition temperature <i>T<sub>g</sub></i> and crystallization onset temperature <i>T<sub>c</sub></i> decreased monotonically with the increasing Sn content in the whole compositional range, resulting in the decrease in the stability criterion Δ<i>T</i> from 33 K (S2) to 23 K (S10). The crystallization kinetics were systematically investigated based on the differential scanning calorimeter (DSC) under non-isothermal conditions. The activation energies of the S8 amorphous sample determined by Kissinger and Ozawa equations were <i>E<sub>g</sub></i> (201.1~209.6 kJ/mol), <i>E<sub>c</sub></i> (188.7~198.3 kJ/mol), <i>E<sub>p</sub></i><sub>1</sub> (229.8~240.1 kJ/mol) and <i>E<sub>p</sub></i><sub>2</sub> (264.2~272.6 kJ/mol), respectively. The microscopic structure of the S8 amorphous sample and its annealed glass-ceramics were also analyzed by X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). The crystalline products were identified as having a SnTe phase (primary crystalline phase) and Ga<sub>6</sub>SnTe<sub>10</sub> phase, thus providing a promising candidate for the development of high-performance thermoelectric glass-ceramic materials. |
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| spelling | doaj.art-154f1dfe47364c36b44351bed8301d112023-11-17T12:39:04ZengMDPI AGMetals2075-47012023-03-0113353210.3390/met13030532A Comprehensive Study of Sn-Ga<sub>2</sub>Te<sub>3</sub>-SnTe Amorphous Alloys: Glass Formation and Crystallization KineticsHuan Zhang0Yaqi Zhang1Gong Li2State Key Laboratory of Metastable Materials Science and Technology, College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004, ChinaState Key Laboratory of Metastable Materials Science and Technology, College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004, ChinaState Key Laboratory of Metastable Materials Science and Technology, College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004, ChinaIn this paper, newly developed tellurium-based [(Ga<sub>2</sub>Te<sub>3</sub>)<sub>34</sub>(SnTe)<sub>66</sub>]<sub>100-x</sub>-Sn<sub>x</sub> amorphous alloys were prepared by the melt-spun method, with a linear velocity of 40 m/s and injection pressure of 20 kPa under an Ar atmosphere. The glass-forming region was identified in the range of <i>x</i> = 0 to 10 mol%. The glass transition temperature <i>T<sub>g</sub></i> and crystallization onset temperature <i>T<sub>c</sub></i> decreased monotonically with the increasing Sn content in the whole compositional range, resulting in the decrease in the stability criterion Δ<i>T</i> from 33 K (S2) to 23 K (S10). The crystallization kinetics were systematically investigated based on the differential scanning calorimeter (DSC) under non-isothermal conditions. The activation energies of the S8 amorphous sample determined by Kissinger and Ozawa equations were <i>E<sub>g</sub></i> (201.1~209.6 kJ/mol), <i>E<sub>c</sub></i> (188.7~198.3 kJ/mol), <i>E<sub>p</sub></i><sub>1</sub> (229.8~240.1 kJ/mol) and <i>E<sub>p</sub></i><sub>2</sub> (264.2~272.6 kJ/mol), respectively. The microscopic structure of the S8 amorphous sample and its annealed glass-ceramics were also analyzed by X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). The crystalline products were identified as having a SnTe phase (primary crystalline phase) and Ga<sub>6</sub>SnTe<sub>10</sub> phase, thus providing a promising candidate for the development of high-performance thermoelectric glass-ceramic materials.https://www.mdpi.com/2075-4701/13/3/532amorphous materialsglass transitioncrystallization kineticsthermal stabilityactivation energy |
| spellingShingle | Huan Zhang Yaqi Zhang Gong Li A Comprehensive Study of Sn-Ga<sub>2</sub>Te<sub>3</sub>-SnTe Amorphous Alloys: Glass Formation and Crystallization Kinetics Metals amorphous materials glass transition crystallization kinetics thermal stability activation energy |
| title | A Comprehensive Study of Sn-Ga<sub>2</sub>Te<sub>3</sub>-SnTe Amorphous Alloys: Glass Formation and Crystallization Kinetics |
| title_full | A Comprehensive Study of Sn-Ga<sub>2</sub>Te<sub>3</sub>-SnTe Amorphous Alloys: Glass Formation and Crystallization Kinetics |
| title_fullStr | A Comprehensive Study of Sn-Ga<sub>2</sub>Te<sub>3</sub>-SnTe Amorphous Alloys: Glass Formation and Crystallization Kinetics |
| title_full_unstemmed | A Comprehensive Study of Sn-Ga<sub>2</sub>Te<sub>3</sub>-SnTe Amorphous Alloys: Glass Formation and Crystallization Kinetics |
| title_short | A Comprehensive Study of Sn-Ga<sub>2</sub>Te<sub>3</sub>-SnTe Amorphous Alloys: Glass Formation and Crystallization Kinetics |
| title_sort | comprehensive study of sn ga sub 2 sub te sub 3 sub snte amorphous alloys glass formation and crystallization kinetics |
| topic | amorphous materials glass transition crystallization kinetics thermal stability activation energy |
| url | https://www.mdpi.com/2075-4701/13/3/532 |
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