Investigation of electronic conductivity in PbI2:Hf single crystals
<p>A study of the electron-hole conductivity in PbI<sub>2</sub> single crystals doped with Hf (0.2 wt %) was conducted using the Wagner polarization cell method. The influence of the Hf alloying admixture (0.2 mass%) on the nature and parameters of lead diiodide’s electronic conduc...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Vasyl Stefanyk Precarpathian National University
2020-01-01
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| Series: | Фізика і хімія твердого тіла |
| Subjects: | |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/4027 |
| Summary: | <p>A study of the electron-hole conductivity in PbI<sub>2</sub> single crystals doped with Hf (0.2 wt %) was conducted using the Wagner polarization cell method. The influence of the Hf alloying admixture (0.2 mass%) on the nature and parameters of lead diiodide’s electronic conductivity has been analyzed.</p><p>Basing on the received current-potential dependences, p-type conductivity of a single crystal PbI<sub>2</sub>:Hf was established. The hole conductivity values (s<sub>р</sub><sup>о</sup>) were determined in the studied temperature range allowing to construct temperature dependence. The s<sub>р</sub><sup>о</sup> value for single crystal PbI<sub>2</sub>:Hf increased responsively to increasing temperature. For PbI<sub>2</sub> and PbI<sub>2</sub>:Hf, a comparative analysis of the electron-hole conductivity was carried out. This investigation allowed determining the activation energy s<sub>р</sub><sup>о</sup> reduction from 0.47 eV to 0.32 eV due to hafnium doping. Consequently, the presence of Hf admixture in PbI<sub>2</sub> crystals causes new impurity acceptor levels located at a distance of 0.64 eV from the upper limit of the valence zone.</p> <p> </p> |
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| ISSN: | 1729-4428 2309-8589 |