Optimization of Pinned Photodiode Pixels for High-Speed Time of Flight Applications
We discuss optimizations of pinned photodiode (PPD) pixels for indirect time of flight sensors. We focus on the transfer-gate and dumping gate regions optimization, on the PPD dimension and shape to assure fast lateral charge transfer and on the epitaxial layer thickness for a good tradeoff between...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8300314/ |
| _version_ | 1818870230495002624 |
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| author | Fabio Acerbi Manuel Moreno-Garcia Gozen Koklu Radoslaw Marcin Gancarz Bernhard Buttgen Alice Biber Daniel Furrer David Stoppa |
| author_facet | Fabio Acerbi Manuel Moreno-Garcia Gozen Koklu Radoslaw Marcin Gancarz Bernhard Buttgen Alice Biber Daniel Furrer David Stoppa |
| author_sort | Fabio Acerbi |
| collection | DOAJ |
| description | We discuss optimizations of pinned photodiode (PPD) pixels for indirect time of flight sensors. We focus on the transfer-gate and dumping gate regions optimization, on the PPD dimension and shape to assure fast lateral charge transfer and on the epitaxial layer thickness for a good tradeoff between fast vertical charge transfer and high quantum efficiency at near infrared region. The overall performance of the pixel is quantified by the demodulation contrast of the pixel at specific frequencies. The operation frequency of the device is determined by the required ambiguity range of the application and the required distance noise. In order to reach a reasonable distance noise, the pixel needs to allow modulation frequencies up to 100 MHz. In this paper, we present TCAD simulation and experimental data on demodulation contrast, impulse response time, and quantum efficiency of 10 × 10 μm pixels. We introduce a setup for impulse response measurement and we compare this to the demodulation contrast. We also discuss the optimization of the dump gate and dump diffusion. With the best pixel we measured a quantum efficiency of about 45% at 850 nm, a demodulation contrast of 47% at 80 MHz, and an impulse response time <; 5 ns. |
| first_indexed | 2024-12-19T12:03:43Z |
| format | Article |
| id | doaj.art-15773b6fa62f4303ba199742963d2958 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-19T12:03:43Z |
| publishDate | 2018-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-15773b6fa62f4303ba199742963d29582022-12-21T20:22:25ZengIEEEIEEE Journal of the Electron Devices Society2168-67342018-01-01636537510.1109/JEDS.2018.28079188300314Optimization of Pinned Photodiode Pixels for High-Speed Time of Flight ApplicationsFabio Acerbi0https://orcid.org/0000-0002-8213-5405Manuel Moreno-Garcia1https://orcid.org/0000-0002-9121-3196Gozen Koklu2Radoslaw Marcin Gancarz3Bernhard Buttgen4Alice Biber5Daniel Furrer6David Stoppa7Center for Material and Microsystems, Fondazione Bruno Kessler, Trento, ItalyCenter for Material and Microsystems, Fondazione Bruno Kessler, Trento, ItalyAdvanced Optical Sensors Division, Heptagon Advanced Micro Optics Pte Ltd, AMS AG, Rüschlikon, SwitzerlandAdvanced Optical Sensors Division, Heptagon Advanced Micro Optics Pte Ltd, AMS AG, Rüschlikon, SwitzerlandAdvanced Optical Sensors Division, Heptagon Advanced Micro Optics Pte Ltd, AMS AG, Rüschlikon, SwitzerlandAdvanced Optical Sensors Division, Heptagon Advanced Micro Optics Pte Ltd, AMS AG, Rüschlikon, SwitzerlandAdvanced Optical Sensors Division, Heptagon Advanced Micro Optics Pte Ltd, AMS AG, Rüschlikon, SwitzerlandAdvanced Optical Sensors Division, Heptagon Advanced Micro Optics Pte Ltd, AMS AG, Rüschlikon, SwitzerlandWe discuss optimizations of pinned photodiode (PPD) pixels for indirect time of flight sensors. We focus on the transfer-gate and dumping gate regions optimization, on the PPD dimension and shape to assure fast lateral charge transfer and on the epitaxial layer thickness for a good tradeoff between fast vertical charge transfer and high quantum efficiency at near infrared region. The overall performance of the pixel is quantified by the demodulation contrast of the pixel at specific frequencies. The operation frequency of the device is determined by the required ambiguity range of the application and the required distance noise. In order to reach a reasonable distance noise, the pixel needs to allow modulation frequencies up to 100 MHz. In this paper, we present TCAD simulation and experimental data on demodulation contrast, impulse response time, and quantum efficiency of 10 × 10 μm pixels. We introduce a setup for impulse response measurement and we compare this to the demodulation contrast. We also discuss the optimization of the dump gate and dump diffusion. With the best pixel we measured a quantum efficiency of about 45% at 850 nm, a demodulation contrast of 47% at 80 MHz, and an impulse response time <; 5 ns.https://ieeexplore.ieee.org/document/8300314/Pinned photodiodetime-of-flightToFtransfer gatedump gatedistance measure |
| spellingShingle | Fabio Acerbi Manuel Moreno-Garcia Gozen Koklu Radoslaw Marcin Gancarz Bernhard Buttgen Alice Biber Daniel Furrer David Stoppa Optimization of Pinned Photodiode Pixels for High-Speed Time of Flight Applications IEEE Journal of the Electron Devices Society Pinned photodiode time-of-flight ToF transfer gate dump gate distance measure |
| title | Optimization of Pinned Photodiode Pixels for High-Speed Time of Flight Applications |
| title_full | Optimization of Pinned Photodiode Pixels for High-Speed Time of Flight Applications |
| title_fullStr | Optimization of Pinned Photodiode Pixels for High-Speed Time of Flight Applications |
| title_full_unstemmed | Optimization of Pinned Photodiode Pixels for High-Speed Time of Flight Applications |
| title_short | Optimization of Pinned Photodiode Pixels for High-Speed Time of Flight Applications |
| title_sort | optimization of pinned photodiode pixels for high speed time of flight applications |
| topic | Pinned photodiode time-of-flight ToF transfer gate dump gate distance measure |
| url | https://ieeexplore.ieee.org/document/8300314/ |
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