Design of GaSb-based monolithic passive photonic devices at wavelengths above 2 µm
In this paper, we report, for the first time, a theoretical study on passive photonic devices including optical power splitters/combiners and grating couplers (GCs) operating at non-telecom wavelengths above 2 µ m in a monolithic GaSb platform. Passive components were designed to operate, in particu...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2023-01-01
|
| Series: | JPhys Photonics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2515-7647/ace509 |
| _version_ | 1797777682452185088 |
|---|---|
| author | Md Saiful Islam Sumon Shrivatch Sankar Weicheng You Imad I Faruque Sarvagya Dwivedi Shamsul Arafin |
| author_facet | Md Saiful Islam Sumon Shrivatch Sankar Weicheng You Imad I Faruque Sarvagya Dwivedi Shamsul Arafin |
| author_sort | Md Saiful Islam Sumon |
| collection | DOAJ |
| description | In this paper, we report, for the first time, a theoretical study on passive photonic devices including optical power splitters/combiners and grating couplers (GCs) operating at non-telecom wavelengths above 2 µ m in a monolithic GaSb platform. Passive components were designed to operate, in particular, at around 2.6 µ m for monolithic integration with active photonic devices on the III–V gallium antimonide material platform. The three popular types of splitters/combiners such as directional couplers, multimode interferometer-, and Y-branch-couplers were theoretically investigated. Based on our optimized design and rigorous analysis, fabrication-compatible 1 × 2 optical power splitters with less than 0.12 dB excess losses, large spectral bandwidth, and a 50:50 splitting ratio are achieved. For fiber-to-chip coupling, we also report the design of GCs with an outcoupling efficiency of ∼29% at 2.56 μ m and a 3 dB bandwidth of 80 nm. The results represent a significant step towards developing a complete functional photonic integrated circuits at mid-wave infrared wavelengths. |
| first_indexed | 2024-03-12T23:07:17Z |
| format | Article |
| id | doaj.art-158218479dce4001bb1f530c602bb818 |
| institution | Directory Open Access Journal |
| issn | 2515-7647 |
| language | English |
| last_indexed | 2024-03-12T23:07:17Z |
| publishDate | 2023-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | JPhys Photonics |
| spelling | doaj.art-158218479dce4001bb1f530c602bb8182023-07-18T11:57:55ZengIOP PublishingJPhys Photonics2515-76472023-01-015303500510.1088/2515-7647/ace509Design of GaSb-based monolithic passive photonic devices at wavelengths above 2 µmMd Saiful Islam Sumon0Shrivatch Sankar1Weicheng You2Imad I Faruque3Sarvagya Dwivedi4Shamsul Arafin5https://orcid.org/0000-0003-4689-2625Department of Electrical and Computer Engineering, The Ohio State University , Columbus, OH, United States of AmericaDepartment of Electrical and Computer Engineering, The Ohio State University , Columbus, OH, United States of AmericaDepartment of Electrical and Computer Engineering, The Ohio State University , Columbus, OH, United States of AmericaQuantum Engineering Technology Laboratories (QET Labs), University of Bristol , Bristol, United KingdomRockley Photonics , Pasadena, CA, United States of AmericaDepartment of Electrical and Computer Engineering, The Ohio State University , Columbus, OH, United States of AmericaIn this paper, we report, for the first time, a theoretical study on passive photonic devices including optical power splitters/combiners and grating couplers (GCs) operating at non-telecom wavelengths above 2 µ m in a monolithic GaSb platform. Passive components were designed to operate, in particular, at around 2.6 µ m for monolithic integration with active photonic devices on the III–V gallium antimonide material platform. The three popular types of splitters/combiners such as directional couplers, multimode interferometer-, and Y-branch-couplers were theoretically investigated. Based on our optimized design and rigorous analysis, fabrication-compatible 1 × 2 optical power splitters with less than 0.12 dB excess losses, large spectral bandwidth, and a 50:50 splitting ratio are achieved. For fiber-to-chip coupling, we also report the design of GCs with an outcoupling efficiency of ∼29% at 2.56 μ m and a 3 dB bandwidth of 80 nm. The results represent a significant step towards developing a complete functional photonic integrated circuits at mid-wave infrared wavelengths.https://doi.org/10.1088/2515-7647/ace509directional couplermultimode interferometerY-branchpower splittersgrating couplerphotonic integrated circuit |
| spellingShingle | Md Saiful Islam Sumon Shrivatch Sankar Weicheng You Imad I Faruque Sarvagya Dwivedi Shamsul Arafin Design of GaSb-based monolithic passive photonic devices at wavelengths above 2 µm JPhys Photonics directional coupler multimode interferometer Y-branch power splitters grating coupler photonic integrated circuit |
| title | Design of GaSb-based monolithic passive photonic devices at wavelengths above 2 µm |
| title_full | Design of GaSb-based monolithic passive photonic devices at wavelengths above 2 µm |
| title_fullStr | Design of GaSb-based monolithic passive photonic devices at wavelengths above 2 µm |
| title_full_unstemmed | Design of GaSb-based monolithic passive photonic devices at wavelengths above 2 µm |
| title_short | Design of GaSb-based monolithic passive photonic devices at wavelengths above 2 µm |
| title_sort | design of gasb based monolithic passive photonic devices at wavelengths above 2 µm |
| topic | directional coupler multimode interferometer Y-branch power splitters grating coupler photonic integrated circuit |
| url | https://doi.org/10.1088/2515-7647/ace509 |
| work_keys_str_mv | AT mdsaifulislamsumon designofgasbbasedmonolithicpassivephotonicdevicesatwavelengthsabove2μm AT shrivatchsankar designofgasbbasedmonolithicpassivephotonicdevicesatwavelengthsabove2μm AT weichengyou designofgasbbasedmonolithicpassivephotonicdevicesatwavelengthsabove2μm AT imadifaruque designofgasbbasedmonolithicpassivephotonicdevicesatwavelengthsabove2μm AT sarvagyadwivedi designofgasbbasedmonolithicpassivephotonicdevicesatwavelengthsabove2μm AT shamsularafin designofgasbbasedmonolithicpassivephotonicdevicesatwavelengthsabove2μm |