Self-Catalyzed InSb/InAs Quantum Dot Nanowires
The nanowire platform offers great opportunities for improving the quality and range of applications of semiconductor quantum wells and dots. Here, we present the self-catalyzed growth of InAs/InSb/InAs axial heterostructured nanowires with a single defect-free InSb quantum dot, on Si substrates, by...
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| Formatua: | Artikulua |
| Hizkuntza: | English |
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MDPI AG
2021-01-01
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| Saila: | Nanomaterials |
| Gaiak: | |
| Sarrera elektronikoa: | https://www.mdpi.com/2079-4991/11/1/179 |
| _version_ | 1827601593661390848 |
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| author | Omer Arif Valentina Zannier Francesca Rossi Daniele Ercolani Fabio Beltram Lucia Sorba |
| author_facet | Omer Arif Valentina Zannier Francesca Rossi Daniele Ercolani Fabio Beltram Lucia Sorba |
| author_sort | Omer Arif |
| collection | DOAJ |
| description | The nanowire platform offers great opportunities for improving the quality and range of applications of semiconductor quantum wells and dots. Here, we present the self-catalyzed growth of InAs/InSb/InAs axial heterostructured nanowires with a single defect-free InSb quantum dot, on Si substrates, by chemical beam epitaxy. A systematic variation of the growth parameters for the InAs top segment has been investigated and the resulting nanowire morphology analyzed. We found that the growth temperature strongly influences the axial and radial growth rates of the top InAs segment. As a consequence, we can reduce the InAs shell thickness around the InSb quantum dot by increasing the InAs growth temperature. Moreover, we observed that both axial and radial growth rates are enhanced by the As line pressure as long as the In droplet on the top of the nanowire is preserved. Finally, the time evolution of the diameter along the entire length of the nanowires allowed us to understand that there are two In diffusion paths contributing to the radial InAs growth and that the interplay of these two mechanisms together with the total length of the nanowires determine the final shape of the nanowires. This study provides insights in understanding the growth mechanisms of self-catalyzed InSb/InAs quantum dot nanowires, and our results can be extended also to the growth of other self-catalyzed heterostructured nanowires, providing useful guidelines for the realization of quantum structures with the desired morphology and properties. |
| first_indexed | 2024-03-09T04:59:43Z |
| format | Article |
| id | doaj.art-158272bc36584ce08b1bad74b880deb5 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T04:59:43Z |
| publishDate | 2021-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-158272bc36584ce08b1bad74b880deb52023-12-03T13:00:36ZengMDPI AGNanomaterials2079-49912021-01-0111117910.3390/nano11010179Self-Catalyzed InSb/InAs Quantum Dot NanowiresOmer Arif0Valentina Zannier1Francesca Rossi2Daniele Ercolani3Fabio Beltram4Lucia Sorba5NEST, Istituto Nanoscienze–CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, ItalyNEST, Istituto Nanoscienze–CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, ItalyIMEM–CNR, Parco Area delle Scienze 37/A, I-43124 Parma, ItalyNEST, Istituto Nanoscienze–CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, ItalyNEST, Istituto Nanoscienze–CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, ItalyNEST, Istituto Nanoscienze–CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, ItalyThe nanowire platform offers great opportunities for improving the quality and range of applications of semiconductor quantum wells and dots. Here, we present the self-catalyzed growth of InAs/InSb/InAs axial heterostructured nanowires with a single defect-free InSb quantum dot, on Si substrates, by chemical beam epitaxy. A systematic variation of the growth parameters for the InAs top segment has been investigated and the resulting nanowire morphology analyzed. We found that the growth temperature strongly influences the axial and radial growth rates of the top InAs segment. As a consequence, we can reduce the InAs shell thickness around the InSb quantum dot by increasing the InAs growth temperature. Moreover, we observed that both axial and radial growth rates are enhanced by the As line pressure as long as the In droplet on the top of the nanowire is preserved. Finally, the time evolution of the diameter along the entire length of the nanowires allowed us to understand that there are two In diffusion paths contributing to the radial InAs growth and that the interplay of these two mechanisms together with the total length of the nanowires determine the final shape of the nanowires. This study provides insights in understanding the growth mechanisms of self-catalyzed InSb/InAs quantum dot nanowires, and our results can be extended also to the growth of other self-catalyzed heterostructured nanowires, providing useful guidelines for the realization of quantum structures with the desired morphology and properties.https://www.mdpi.com/2079-4991/11/1/179InSb quantum dotsnanowiresaxial heterostructuresself-catalyzed growth |
| spellingShingle | Omer Arif Valentina Zannier Francesca Rossi Daniele Ercolani Fabio Beltram Lucia Sorba Self-Catalyzed InSb/InAs Quantum Dot Nanowires Nanomaterials InSb quantum dots nanowires axial heterostructures self-catalyzed growth |
| title | Self-Catalyzed InSb/InAs Quantum Dot Nanowires |
| title_full | Self-Catalyzed InSb/InAs Quantum Dot Nanowires |
| title_fullStr | Self-Catalyzed InSb/InAs Quantum Dot Nanowires |
| title_full_unstemmed | Self-Catalyzed InSb/InAs Quantum Dot Nanowires |
| title_short | Self-Catalyzed InSb/InAs Quantum Dot Nanowires |
| title_sort | self catalyzed insb inas quantum dot nanowires |
| topic | InSb quantum dots nanowires axial heterostructures self-catalyzed growth |
| url | https://www.mdpi.com/2079-4991/11/1/179 |
| work_keys_str_mv | AT omerarif selfcatalyzedinsbinasquantumdotnanowires AT valentinazannier selfcatalyzedinsbinasquantumdotnanowires AT francescarossi selfcatalyzedinsbinasquantumdotnanowires AT danieleercolani selfcatalyzedinsbinasquantumdotnanowires AT fabiobeltram selfcatalyzedinsbinasquantumdotnanowires AT luciasorba selfcatalyzedinsbinasquantumdotnanowires |