Strain Relaxation Effect on the Peak Wavelength of Blue InGaN/GaN Multi-Quantum Well Micro-LEDs

Strain Relaxation Effect on the Peak Wavelength of Blue InGaN/GaN Multi-Quantum Well Micro-LEDs

In this paper, the edge strain relaxation of InGaN/GaN MQW micro-pillars is studied. Micro-pillar arrays with a diameter of 3–20 μm were prepared on a blue GaN LED wafer by inductively coupled plasma (ICP) etching. The peak wavelength shift caused by edge strain relaxation was tested using micro-LED...

Full description

Bibliographic Details
Main Authors: Chaoqiang Zhang, Ke Gao, Fei Wang, Zhiming Chen, Philip Shields, Sean Lee, Yanqin Wang, Dongyan Zhang, Hongwei Liu, Pingjuan Niu
Format: Article
Language:English
Published: MDPI AG 2022-07-01
Series:Applied Sciences
Subjects:
InGaN/GaN multiple quantum well (MQW)
strain relaxation
micro-LED arrays
photoluminescence (PL)
Raman shift
Online Access:https://www.mdpi.com/2076-3417/12/15/7431

Similar Items

Similar Items