Theoretical Calculation of Reorientation Energy in Metal /Semiconductor Interface
A theoretical calculation of the reorientation energy for non adiabatic electron transfer at interface between metal and semiconductor system was carried out. The continuum outer sphere theory of electron transfer reaction has been extensively used for electron transfer between metal/semiconduct...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
University of Baghdad
2017-05-01
|
| Series: | Ibn Al-Haitham Journal for Pure and Applied Sciences |
| Subjects: | |
| Online Access: | https://jih.uobaghdad.edu.iq/index.php/j/article/view/573 |
| Summary: | A theoretical calculation of the reorientation energy for non adiabatic electron transfer at
interface between metal and semiconductor system was carried out. The continuum outer
sphere theory of electron transfer reaction has been extensively used for electron transfer
between metal/semiconductor interface .It is found that in these calculations the reorientation
energy is proportional to the optical and statistical dielectric constant of semiconductor ,
properties of metal ,and the distance between metal and semiconductor .Results of
reorientation energy show that ZnO semiconductor with metal Au possess a good matching as
compared with ZnS and ZnSe . Theoretical calculation showed a good agreement with
experimental value.
|
|---|---|
| ISSN: | 1609-4042 2521-3407 |