PECVD SiNx passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management
In this work, multi-layer PECVD SiNx/SiNx and SiNx/SiOy passivations are developed featuring very high soft breakdown strength and tunable stress properties, which would allow for stress engineering and wafer bow minimization. AlGaN/GaN-on-Si wafers (150 mm) with very low initial bow (<5 μm) are...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-03-01
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| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370422000293 |