Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes
This paper analyzes 2D photonic crystal surface-emitting laser diodes with void-containing and all-semiconductor structures by comparing their simulated mode distribution, band structure, and coupling coefficients. A photonic crystal design with a square lattice and circle atoms is considered.
Bibliographic Details
| Main Authors: |
Z. Bian,
K. J. Rae,
B. C. King,
D. Kim,
G. Li,
S. Thoms,
D. T. D. Childs,
N. D. Gerrard,
N. Babazadeh,
P. Reynolds,
J. Grant,
A. F. McKenzie,
J. R. Orchard,
R. J. E. Taylor,
R. A. Hogg |
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| Format: | Article
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| Language: | English |
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| Published: |
AIP Publishing LLC
2021-06-01
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| Series: | AIP Advances
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| Online Access: | http://dx.doi.org/10.1063/5.0053535
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