Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes

Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes

This paper analyzes 2D photonic crystal surface-emitting laser diodes with void-containing and all-semiconductor structures by comparing their simulated mode distribution, band structure, and coupling coefficients. A photonic crystal design with a square lattice and circle atoms is considered.

Bibliographic Details
Main Authors: Z. Bian, K. J. Rae, B. C. King, D. Kim, G. Li, S. Thoms, D. T. D. Childs, N. D. Gerrard, N. Babazadeh, P. Reynolds, J. Grant, A. F. McKenzie, J. R. Orchard, R. J. E. Taylor, R. A. Hogg
Format: Article
Language:English
Published: AIP Publishing LLC 2021-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0053535

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