Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing
In this study, copper indium selenide (CIS) films were synthesized from electrodeposited Cu-In-Se precursors by two-step annealing. The agglomeration phenomenon of the electrodeposited In layer usually occurred on the Cu surface. A thermal process was adopted to turn Cu-In precursors into uniform Cu...
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| Format: | Article |
| Language: | English |
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International Association of Physical Chemists (IAPC)
2014-02-01
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| Series: | Journal of Electrochemical Science and Engineering |
| Subjects: | |
| Online Access: | http://www.jese-online.org/Articles/Vol_04/No_1/pdf/jESE_Vol4_No1_p27-35_2014.pdf |
| _version_ | 1818602605159383040 |
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| author | TSUNG-WEI CHANG SHAO-YU HU WEN-HSI LEE |
| author_facet | TSUNG-WEI CHANG SHAO-YU HU WEN-HSI LEE |
| author_sort | TSUNG-WEI CHANG |
| collection | DOAJ |
| description | In this study, copper indium selenide (CIS) films were synthesized from electrodeposited Cu-In-Se precursors by two-step annealing. The agglomeration phenomenon of the electrodeposited In layer usually occurred on the Cu surface. A thermal process was adopted to turn Cu-In precursors into uniform Cu11In9 binary compounds. After deposition of the Se layer, annealing was employed to form chalcopyrite CIS. However, synthesis of CIS from Cu11In9 requires sufficient thermal energy. Annealing temperature and time were investigated to grow high quality CIS film. Various electrodeposition conditions were investigated to achieve the proper atomic ratio of CIS. The properties of the CIS films were characterized by scanning electron microscopy (SEM), X-ray Diffraction (XRD), and Raman spectra. |
| first_indexed | 2024-12-16T13:09:56Z |
| format | Article |
| id | doaj.art-15dcfd7230614f83b1cd6f980b255cfd |
| institution | Directory Open Access Journal |
| issn | 1847-9286 1847-9286 |
| language | English |
| last_indexed | 2024-12-16T13:09:56Z |
| publishDate | 2014-02-01 |
| publisher | International Association of Physical Chemists (IAPC) |
| record_format | Article |
| series | Journal of Electrochemical Science and Engineering |
| spelling | doaj.art-15dcfd7230614f83b1cd6f980b255cfd2022-12-21T22:30:39ZengInternational Association of Physical Chemists (IAPC)Journal of Electrochemical Science and Engineering1847-92861847-92862014-02-0141273510.5599/jese.2014.0042Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealingTSUNG-WEI CHANG0SHAO-YU HU1WEN-HSI LEE2Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.CDepartment of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.CDepartment of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.CIn this study, copper indium selenide (CIS) films were synthesized from electrodeposited Cu-In-Se precursors by two-step annealing. The agglomeration phenomenon of the electrodeposited In layer usually occurred on the Cu surface. A thermal process was adopted to turn Cu-In precursors into uniform Cu11In9 binary compounds. After deposition of the Se layer, annealing was employed to form chalcopyrite CIS. However, synthesis of CIS from Cu11In9 requires sufficient thermal energy. Annealing temperature and time were investigated to grow high quality CIS film. Various electrodeposition conditions were investigated to achieve the proper atomic ratio of CIS. The properties of the CIS films were characterized by scanning electron microscopy (SEM), X-ray Diffraction (XRD), and Raman spectra.http://www.jese-online.org/Articles/Vol_04/No_1/pdf/jESE_Vol4_No1_p27-35_2014.pdfCuInSe2CISannealingelectrodeposition |
| spellingShingle | TSUNG-WEI CHANG SHAO-YU HU WEN-HSI LEE Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing Journal of Electrochemical Science and Engineering CuInSe2 CIS annealing electrodeposition |
| title | Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing |
| title_full | Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing |
| title_fullStr | Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing |
| title_full_unstemmed | Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing |
| title_short | Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing |
| title_sort | synthesis of cuinse2 thin films from electrodeposited cu11in9 precursors by two step annealing |
| topic | CuInSe2 CIS annealing electrodeposition |
| url | http://www.jese-online.org/Articles/Vol_04/No_1/pdf/jESE_Vol4_No1_p27-35_2014.pdf |
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