Tuning current plateau regions in parallelized single-electron pumps

The parallelization of single-electron pumps is a promising method to increase the quantized current level produced from a semiconductor-based single-electron system. In the parallelization of multiple pumps with common gate electrodes, the key process is to fabricate them with high reproducibility,...

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Main Authors: Bum-Kyu Kim, Byeong-Sung Yu, Suk-In Park, Jindong Song, Nam Kim, Myung-Ho Bae
Format: Article
Language:English
Published: AIP Publishing LLC 2022-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0117055
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author Bum-Kyu Kim
Byeong-Sung Yu
Suk-In Park
Jindong Song
Nam Kim
Myung-Ho Bae
author_facet Bum-Kyu Kim
Byeong-Sung Yu
Suk-In Park
Jindong Song
Nam Kim
Myung-Ho Bae
author_sort Bum-Kyu Kim
collection DOAJ
description The parallelization of single-electron pumps is a promising method to increase the quantized current level produced from a semiconductor-based single-electron system. In the parallelization of multiple pumps with common gate electrodes, the key process is to fabricate them with high reproducibility, resulting in an overlap of the most accurate regions in current plateaus at the same gate voltages. However, because of the lack of gating reproducibility, we here adopted a separate gate-tuning scheme to realize the overlap of the current plateaus instead of using a common gate scheme. To minimize the number of gates, we used entrance gates in common but an exit gate in separate with an additional in-common gate located outside the quantum dot but near the exit gates. The combination of the additional gate and separate exit gates led to an optimal current plateau overlap with a pair of pumps among six pumps in parallel. Under the optimal plateau-tuned condition, we achieved a relative type-A uncertainty of 1.4 × 10−6 at a 100 pA level with f = 160 MHz in the parallelized mode with the second current plateaus for both pumps.
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spelling doaj.art-15e18ea7d3fa419e9727e2488abb13f62022-12-22T02:28:28ZengAIP Publishing LLCAIP Advances2158-32262022-10-011210105118105118-710.1063/5.0117055Tuning current plateau regions in parallelized single-electron pumpsBum-Kyu Kim0Byeong-Sung Yu1Suk-In Park2Jindong Song3Nam Kim4Myung-Ho Bae5Korea Research Institute of Standards and Science, Daejeon 34113, Republic of KoreaDepartment of Physics and Center for Quantum Coherence in Condensed Matter, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of KoreaKorea Institute of Science and Technology, Seoul 02792, Republic of KoreaKorea Institute of Science and Technology, Seoul 02792, Republic of KoreaKorea Research Institute of Standards and Science, Daejeon 34113, Republic of KoreaKorea Research Institute of Standards and Science, Daejeon 34113, Republic of KoreaThe parallelization of single-electron pumps is a promising method to increase the quantized current level produced from a semiconductor-based single-electron system. In the parallelization of multiple pumps with common gate electrodes, the key process is to fabricate them with high reproducibility, resulting in an overlap of the most accurate regions in current plateaus at the same gate voltages. However, because of the lack of gating reproducibility, we here adopted a separate gate-tuning scheme to realize the overlap of the current plateaus instead of using a common gate scheme. To minimize the number of gates, we used entrance gates in common but an exit gate in separate with an additional in-common gate located outside the quantum dot but near the exit gates. The combination of the additional gate and separate exit gates led to an optimal current plateau overlap with a pair of pumps among six pumps in parallel. Under the optimal plateau-tuned condition, we achieved a relative type-A uncertainty of 1.4 × 10−6 at a 100 pA level with f = 160 MHz in the parallelized mode with the second current plateaus for both pumps.http://dx.doi.org/10.1063/5.0117055
spellingShingle Bum-Kyu Kim
Byeong-Sung Yu
Suk-In Park
Jindong Song
Nam Kim
Myung-Ho Bae
Tuning current plateau regions in parallelized single-electron pumps
AIP Advances
title Tuning current plateau regions in parallelized single-electron pumps
title_full Tuning current plateau regions in parallelized single-electron pumps
title_fullStr Tuning current plateau regions in parallelized single-electron pumps
title_full_unstemmed Tuning current plateau regions in parallelized single-electron pumps
title_short Tuning current plateau regions in parallelized single-electron pumps
title_sort tuning current plateau regions in parallelized single electron pumps
url http://dx.doi.org/10.1063/5.0117055
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