Morphology Controlled Fabrication of InN Nanowires on Brass Substrates
Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was...
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| Format: | Article |
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MDPI AG
2016-10-01
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| Series: | Nanomaterials |
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| Online Access: | http://www.mdpi.com/2079-4991/6/11/195 |
| _version_ | 1819116715886247936 |
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| author | Huijie Li Guijuan Zhao Lianshan Wang Zhen Chen Shaoyan Yang |
| author_facet | Huijie Li Guijuan Zhao Lianshan Wang Zhen Chen Shaoyan Yang |
| author_sort | Huijie Li |
| collection | DOAJ |
| description | Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials. |
| first_indexed | 2024-12-22T05:21:30Z |
| format | Article |
| id | doaj.art-15f07bbab94442828b36a09331d89fea |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-12-22T05:21:30Z |
| publishDate | 2016-10-01 |
| publisher | MDPI AG |
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| series | Nanomaterials |
| spelling | doaj.art-15f07bbab94442828b36a09331d89fea2022-12-21T18:37:43ZengMDPI AGNanomaterials2079-49912016-10-0161119510.3390/nano6110195nano6110195Morphology Controlled Fabrication of InN Nanowires on Brass SubstratesHuijie Li0Guijuan Zhao1Lianshan Wang2Zhen Chen3Shaoyan Yang4Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, ChinaKey Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, ChinaKey Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, ChinaLatticePower (Jiangxi) Corporation, No. 699 North Aixihu Road, National High-Tech Industrial Development Zone, Nanchang 330029, ChinaKey Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, ChinaGrowth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials.http://www.mdpi.com/2079-4991/6/11/195III-nitridesnanowiresmetal substratesindium nitridemetal-organic chemical vapor deposition |
| spellingShingle | Huijie Li Guijuan Zhao Lianshan Wang Zhen Chen Shaoyan Yang Morphology Controlled Fabrication of InN Nanowires on Brass Substrates Nanomaterials III-nitrides nanowires metal substrates indium nitride metal-organic chemical vapor deposition |
| title | Morphology Controlled Fabrication of InN Nanowires on Brass Substrates |
| title_full | Morphology Controlled Fabrication of InN Nanowires on Brass Substrates |
| title_fullStr | Morphology Controlled Fabrication of InN Nanowires on Brass Substrates |
| title_full_unstemmed | Morphology Controlled Fabrication of InN Nanowires on Brass Substrates |
| title_short | Morphology Controlled Fabrication of InN Nanowires on Brass Substrates |
| title_sort | morphology controlled fabrication of inn nanowires on brass substrates |
| topic | III-nitrides nanowires metal substrates indium nitride metal-organic chemical vapor deposition |
| url | http://www.mdpi.com/2079-4991/6/11/195 |
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