Low Leakage Current Metal–Insulator–Metal Device Based on a Beryllium Oxide Insulator Created by a Two-Step Spin-Coating Method as a Novel Type of Modified Pechini Synthesis

Low Leakage Current Metal–Insulator–Metal Device Based on a Beryllium Oxide Insulator Created by a Two-Step Spin-Coating Method as a Novel Type of Modified Pechini Synthesis

Beryllium oxide (BeO) is considered to be an attractive alternative material for use in future industries in areas such as semiconductors, spacecraft, aircraft, and rocket technologies due to its high bandgap energy, useful melting point, good thermal conductivity, and dielectric constants. In this...

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Bibliographic Details
Main Authors: Young Pyo Jeon, Dongpyo Hong, Sang-hwa Lee, Eun Jung Lee, Tae Woong Cho, Do Yeon Kim, Chae Yeon Kim, JuSang Park, Young Jun Kim, Young Joon Yoo, Sang Yoon Park
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Electronics
Subjects:
beryllium oxide
thin film
metal-insulator-metal
Pechini method
breakdown voltage
Online Access:https://www.mdpi.com/2079-9292/12/1/47

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