The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance
Thin-film transistors (TFTs) based on amorphous indium-gallium-zinc-oxide (a-IGZO) have proved promising features for flexible and lightweight electronics. To achieve technological maturity for commercial and industrial applications, their stability under extreme environmental conditions is highly r...
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| Format: | Article |
| Language: | English |
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Frontiers Media S.A.
2022-01-01
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| Series: | Frontiers in Electronics |
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| Online Access: | https://www.frontiersin.org/articles/10.3389/felec.2021.786601/full |
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| author | Federica Catania Hugo De Souza Oliveira Martina A. Costa Angeli Manuela Ciocca Salvador Pané Niko Münzenrieder Giuseppe Cantarella |
| author_facet | Federica Catania Hugo De Souza Oliveira Martina A. Costa Angeli Manuela Ciocca Salvador Pané Niko Münzenrieder Giuseppe Cantarella |
| author_sort | Federica Catania |
| collection | DOAJ |
| description | Thin-film transistors (TFTs) based on amorphous indium-gallium-zinc-oxide (a-IGZO) have proved promising features for flexible and lightweight electronics. To achieve technological maturity for commercial and industrial applications, their stability under extreme environmental conditions is highly required. The combined effects of temperature (T) from −30.0°C to 50.0°C and relative humidity (RH) stress from 0 to 95% on a-IGZO TFT is presented. The TFT performances and the parameters variation were analysed in two different experiments. First, the TFT response was extracted while undergoing the most extreme climate conditions on Earth, ranging from the African Desert (50.0°C, 22%) to Antarctic (−30.0°C, 0%). Afterwards, the device functionality was demonstrated in three parts of the human body (forehand, arm and foot) at low (35%), medium (60%) and high (95%) relative humidity for on-skin and wearable applications. The sensitivity to T/RH variations suggests the suitability of these TFTs as sensing element for epidermal electronics and artificial skin. |
| first_indexed | 2024-12-20T14:02:30Z |
| format | Article |
| id | doaj.art-15f4f370ed9544158d9a33c2b2f9e706 |
| institution | Directory Open Access Journal |
| issn | 2673-5857 |
| language | English |
| last_indexed | 2024-12-20T14:02:30Z |
| publishDate | 2022-01-01 |
| publisher | Frontiers Media S.A. |
| record_format | Article |
| series | Frontiers in Electronics |
| spelling | doaj.art-15f4f370ed9544158d9a33c2b2f9e7062022-12-21T19:38:20ZengFrontiers Media S.A.Frontiers in Electronics2673-58572022-01-01210.3389/felec.2021.786601786601The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor PerformanceFederica Catania0Hugo De Souza Oliveira1Martina A. Costa Angeli2Manuela Ciocca3Salvador Pané4Niko Münzenrieder5Giuseppe Cantarella6Faculty of Science and Technology, Free University of Bolzano-Bozen, Bolzano, ItalyFaculty of Science and Technology, Free University of Bolzano-Bozen, Bolzano, ItalyFaculty of Science and Technology, Free University of Bolzano-Bozen, Bolzano, ItalyFaculty of Science and Technology, Free University of Bolzano-Bozen, Bolzano, ItalyInstitute of Robotics and Intelligent Systems, ETH Zurich, Zurich, SwitzerlandFaculty of Science and Technology, Free University of Bolzano-Bozen, Bolzano, ItalyFaculty of Science and Technology, Free University of Bolzano-Bozen, Bolzano, ItalyThin-film transistors (TFTs) based on amorphous indium-gallium-zinc-oxide (a-IGZO) have proved promising features for flexible and lightweight electronics. To achieve technological maturity for commercial and industrial applications, their stability under extreme environmental conditions is highly required. The combined effects of temperature (T) from −30.0°C to 50.0°C and relative humidity (RH) stress from 0 to 95% on a-IGZO TFT is presented. The TFT performances and the parameters variation were analysed in two different experiments. First, the TFT response was extracted while undergoing the most extreme climate conditions on Earth, ranging from the African Desert (50.0°C, 22%) to Antarctic (−30.0°C, 0%). Afterwards, the device functionality was demonstrated in three parts of the human body (forehand, arm and foot) at low (35%), medium (60%) and high (95%) relative humidity for on-skin and wearable applications. The sensitivity to T/RH variations suggests the suitability of these TFTs as sensing element for epidermal electronics and artificial skin.https://www.frontiersin.org/articles/10.3389/felec.2021.786601/fullthin-film transistors (TFTs)flexible electronicsoxide semiconductorsindium-gallium-zinc-oxide (IGZO)wearable electronicshumidity sensor |
| spellingShingle | Federica Catania Hugo De Souza Oliveira Martina A. Costa Angeli Manuela Ciocca Salvador Pané Niko Münzenrieder Giuseppe Cantarella The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance Frontiers in Electronics thin-film transistors (TFTs) flexible electronics oxide semiconductors indium-gallium-zinc-oxide (IGZO) wearable electronics humidity sensor |
| title | The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance |
| title_full | The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance |
| title_fullStr | The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance |
| title_full_unstemmed | The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance |
| title_short | The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance |
| title_sort | influence of climate conditions and on skin positioning on ingazno thin film transistor performance |
| topic | thin-film transistors (TFTs) flexible electronics oxide semiconductors indium-gallium-zinc-oxide (IGZO) wearable electronics humidity sensor |
| url | https://www.frontiersin.org/articles/10.3389/felec.2021.786601/full |
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