Photoelectrostimulated passivation of spectrometric Cd1–xZnxTe-detectors

A new physical method of Cd1–xZnxTe-detector’s treatment – photoelectrostimulated passivation is developed. In its frames, oxidation of the sample followed by the formation of high-resistance oxide layer on the surface occurs at simultaneous action of both intense light radiation and electric field....

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Main Authors: Fedorenko O. A., Khristyan V. A., Zagoruiko Yu. A.
Format: Article
Language:English
Published: Politehperiodika 2010-03-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
Online Access:http://www.tkea.com.ua/tkea/2010/2_2010/pdf/13.zip
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author Fedorenko O. A.
Khristyan V. A.
Zagoruiko Yu. A.
author_facet Fedorenko O. A.
Khristyan V. A.
Zagoruiko Yu. A.
author_sort Fedorenko O. A.
collection DOAJ
description A new physical method of Cd1–xZnxTe-detector’s treatment – photoelectrostimulated passivation is developed. In its frames, oxidation of the sample followed by the formation of high-resistance oxide layer on the surface occurs at simultaneous action of both intense light radiation and electric field. It is shown that the method is easily realized and provides the obtaining of thick high-resistance oxide films, that essentially increases the surface electrical resistance of Cd1–xZnxTe-samples and diminishes leakage currents in them.
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spelling doaj.art-15f66f4252bd49fdae8c45c42c1d20892022-12-22T01:32:29ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182010-03-0125657Photoelectrostimulated passivation of spectrometric Cd1–xZnxTe-detectorsFedorenko O. A.Khristyan V. A.Zagoruiko Yu. A.A new physical method of Cd1–xZnxTe-detector’s treatment – photoelectrostimulated passivation is developed. In its frames, oxidation of the sample followed by the formation of high-resistance oxide layer on the surface occurs at simultaneous action of both intense light radiation and electric field. It is shown that the method is easily realized and provides the obtaining of thick high-resistance oxide films, that essentially increases the surface electrical resistance of Cd1–xZnxTe-samples and diminishes leakage currents in them.http://www.tkea.com.ua/tkea/2010/2_2010/pdf/13.zipphotoelectroinduced surface passivationleakage currentsCd1-xZnxTe detector
spellingShingle Fedorenko O. A.
Khristyan V. A.
Zagoruiko Yu. A.
Photoelectrostimulated passivation of spectrometric Cd1–xZnxTe-detectors
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
photoelectroinduced surface passivation
leakage currents
Cd1-xZnxTe detector
title Photoelectrostimulated passivation of spectrometric Cd1–xZnxTe-detectors
title_full Photoelectrostimulated passivation of spectrometric Cd1–xZnxTe-detectors
title_fullStr Photoelectrostimulated passivation of spectrometric Cd1–xZnxTe-detectors
title_full_unstemmed Photoelectrostimulated passivation of spectrometric Cd1–xZnxTe-detectors
title_short Photoelectrostimulated passivation of spectrometric Cd1–xZnxTe-detectors
title_sort photoelectrostimulated passivation of spectrometric cd1 xznxte detectors
topic photoelectroinduced surface passivation
leakage currents
Cd1-xZnxTe detector
url http://www.tkea.com.ua/tkea/2010/2_2010/pdf/13.zip
work_keys_str_mv AT fedorenkooa photoelectrostimulatedpassivationofspectrometriccd1xznxtedetectors
AT khristyanva photoelectrostimulatedpassivationofspectrometriccd1xznxtedetectors
AT zagoruikoyua photoelectrostimulatedpassivationofspectrometriccd1xznxtedetectors