An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold
Abstract Here, a new 4:2 approximate compressor is presented by the gate diffusion input (GDI) technique. Although GDI cells suffer from threshold voltage drop, the dynamic threshold approach and carbon nanotube field‐effect transistors are merged to overcome the mentioned problem. The proposed cell...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
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Wiley
2021-08-01
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Series: | Electronics Letters |
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Online Access: | https://doi.org/10.1049/ell2.12221 |
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author | Mahmood Rafiee Yaqhoub Sadeghi Nabiollah Shiri Ayoub Sadeghi |
author_facet | Mahmood Rafiee Yaqhoub Sadeghi Nabiollah Shiri Ayoub Sadeghi |
author_sort | Mahmood Rafiee |
collection | DOAJ |
description | Abstract Here, a new 4:2 approximate compressor is presented by the gate diffusion input (GDI) technique. Although GDI cells suffer from threshold voltage drop, the dynamic threshold approach and carbon nanotube field‐effect transistors are merged to overcome the mentioned problem. The proposed cell has full‐swing outputs, while its error and power delay product are at low rates. Therefore, low voltage multipliers that are used in image processing can benefit from the proposed compressor. |
first_indexed | 2024-04-12T23:21:10Z |
format | Article |
id | doaj.art-15f864f6546a4af48d0db003e3e1ee1b |
institution | Directory Open Access Journal |
issn | 0013-5194 1350-911X |
language | English |
last_indexed | 2024-04-12T23:21:10Z |
publishDate | 2021-08-01 |
publisher | Wiley |
record_format | Article |
series | Electronics Letters |
spelling | doaj.art-15f864f6546a4af48d0db003e3e1ee1b2022-12-22T03:12:31ZengWileyElectronics Letters0013-51941350-911X2021-08-01571765065210.1049/ell2.12221An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic thresholdMahmood Rafiee0Yaqhoub Sadeghi1Nabiollah Shiri2Ayoub Sadeghi3Department of Electrical Engineering Shiraz Branch Islamic Azad University Shiraz IranDepartment of Electrical Engineering Qatar University Doha QatarDepartment of Electrical Engineering Shiraz Branch Islamic Azad University Shiraz IranDepartment of Electrical Engineering Shiraz Branch Islamic Azad University Shiraz IranAbstract Here, a new 4:2 approximate compressor is presented by the gate diffusion input (GDI) technique. Although GDI cells suffer from threshold voltage drop, the dynamic threshold approach and carbon nanotube field‐effect transistors are merged to overcome the mentioned problem. The proposed cell has full‐swing outputs, while its error and power delay product are at low rates. Therefore, low voltage multipliers that are used in image processing can benefit from the proposed compressor.https://doi.org/10.1049/ell2.12221Logic circuitsOther field effect devicesInterpolation and function approximation (numerical analysis)Logic and switching circuitsInterpolation and function approximation (numerical analysis)Fullerene, nanotube and related devices |
spellingShingle | Mahmood Rafiee Yaqhoub Sadeghi Nabiollah Shiri Ayoub Sadeghi An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold Electronics Letters Logic circuits Other field effect devices Interpolation and function approximation (numerical analysis) Logic and switching circuits Interpolation and function approximation (numerical analysis) Fullerene, nanotube and related devices |
title | An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold |
title_full | An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold |
title_fullStr | An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold |
title_full_unstemmed | An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold |
title_short | An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold |
title_sort | approximate cntfet 4 2 compressor based on gate diffusion input and dynamic threshold |
topic | Logic circuits Other field effect devices Interpolation and function approximation (numerical analysis) Logic and switching circuits Interpolation and function approximation (numerical analysis) Fullerene, nanotube and related devices |
url | https://doi.org/10.1049/ell2.12221 |
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