Preparation and luminescent properties of zinc sulfoselenide thin films
The preparation of zinc sulfoselenide heterolayers is considered. The possibility of obtaining a hexagonal modification of the crystal lattice by the method of isovalent substitution was shown. The λ-modulated optical reflection was studied and the parameters of the energy structure of α-ZnSe, α-ZnS...
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| Format: | Article |
| Language: | English |
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Vasyl Stefanyk Precarpathian National University
2020-01-01
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| Series: | Фізика і хімія твердого тіла |
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| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/3988 |
| _version_ | 1819183160683921408 |
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| author | M. M. Slyotov O. M. Slyotov |
| author_facet | M. M. Slyotov O. M. Slyotov |
| author_sort | M. M. Slyotov |
| collection | DOAJ |
| description | The preparation of zinc sulfoselenide heterolayers is considered. The possibility of obtaining a hexagonal modification of the crystal lattice by the method of isovalent substitution was shown. The λ-modulated optical reflection was studied and the parameters of the energy structure of α-ZnSe, α-ZnS, α-ZnS<sub>0.45</sub>Se<sub>0.55</sub> were determined. It has been established that the obtained heterolayers are characterized by intense photoluminescence with a quantum yield <em>η</em> = 8–12% in the blue-violet region. It is formed by constituent bands, the nature of which is determined by the annihilation of bound excitons and interband transitions of free charge carriers. It is shown that the selection of temperature regimes allows obtaining radiation with <em>ħω<sub>m</sub></em> maxima in the violet 2.80 eV, blue 2.70 eV and green 2.45 eV spectral regions. It is determined by the generation-recombination transitions involving donor and acceptor states formed by intrinsic point defects of the crystalline lattice V*(Se), V'(Zn) and <em>Zn<sub>i</sub></em>, respectively. The models of radiative recombination are discussed. |
| first_indexed | 2024-12-22T22:57:37Z |
| format | Article |
| id | doaj.art-161134d07b5e447a9c3c14299025c6b7 |
| institution | Directory Open Access Journal |
| issn | 1729-4428 2309-8589 |
| language | English |
| last_indexed | 2024-12-22T22:57:37Z |
| publishDate | 2020-01-01 |
| publisher | Vasyl Stefanyk Precarpathian National University |
| record_format | Article |
| series | Фізика і хімія твердого тіла |
| spelling | doaj.art-161134d07b5e447a9c3c14299025c6b72022-12-21T18:09:46ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892020-01-0120435435910.15330/pcss.20.4.354-3593417Preparation and luminescent properties of zinc sulfoselenide thin filmsM. M. Slyotov0O. M. Slyotov1Чернівецький національний університет імені Юрія ФедьковичаЧернівецький національний університет імені Юрія ФедьковичаThe preparation of zinc sulfoselenide heterolayers is considered. The possibility of obtaining a hexagonal modification of the crystal lattice by the method of isovalent substitution was shown. The λ-modulated optical reflection was studied and the parameters of the energy structure of α-ZnSe, α-ZnS, α-ZnS<sub>0.45</sub>Se<sub>0.55</sub> were determined. It has been established that the obtained heterolayers are characterized by intense photoluminescence with a quantum yield <em>η</em> = 8–12% in the blue-violet region. It is formed by constituent bands, the nature of which is determined by the annihilation of bound excitons and interband transitions of free charge carriers. It is shown that the selection of temperature regimes allows obtaining radiation with <em>ħω<sub>m</sub></em> maxima in the violet 2.80 eV, blue 2.70 eV and green 2.45 eV spectral regions. It is determined by the generation-recombination transitions involving donor and acceptor states formed by intrinsic point defects of the crystalline lattice V*(Se), V'(Zn) and <em>Zn<sub>i</sub></em>, respectively. The models of radiative recombination are discussed.http://journals.pu.if.ua/index.php/pcss/article/view/3988ізoвоалентні елементиізотермічний відпалгексагональна структурагетерошариенергетична структурафотолюмінесценціяполяризація |
| spellingShingle | M. M. Slyotov O. M. Slyotov Preparation and luminescent properties of zinc sulfoselenide thin films Фізика і хімія твердого тіла ізoвоалентні елементи ізотермічний відпал гексагональна структура гетерошари енергетична структура фотолюмінесценція поляризація |
| title | Preparation and luminescent properties of zinc sulfoselenide thin films |
| title_full | Preparation and luminescent properties of zinc sulfoselenide thin films |
| title_fullStr | Preparation and luminescent properties of zinc sulfoselenide thin films |
| title_full_unstemmed | Preparation and luminescent properties of zinc sulfoselenide thin films |
| title_short | Preparation and luminescent properties of zinc sulfoselenide thin films |
| title_sort | preparation and luminescent properties of zinc sulfoselenide thin films |
| topic | ізoвоалентні елементи ізотермічний відпал гексагональна структура гетерошари енергетична структура фотолюмінесценція поляризація |
| url | http://journals.pu.if.ua/index.php/pcss/article/view/3988 |
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