Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors
It is becoming more important for electronic devices to operate stably and reproducibly under harsh environments, such as extremely low and/or high temperatures, for robust and practical applications. Here, we report on the effects of atomic-layer-deposited (ALD) aluminum oxide (Al2O3) passivation o...
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| Format: | Article |
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MDPI AG
2018-03-01
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| Series: | Applied Sciences |
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| Online Access: | http://www.mdpi.com/2076-3417/8/3/424 |
| _version_ | 1818536350411915264 |
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| author | Seok Hwan Jeong Na Liu Heekyeong Park Young Ki Hong Sunkook Kim |
| author_facet | Seok Hwan Jeong Na Liu Heekyeong Park Young Ki Hong Sunkook Kim |
| author_sort | Seok Hwan Jeong |
| collection | DOAJ |
| description | It is becoming more important for electronic devices to operate stably and reproducibly under harsh environments, such as extremely low and/or high temperatures, for robust and practical applications. Here, we report on the effects of atomic-layer-deposited (ALD) aluminum oxide (Al2O3) passivation on multilayer molybdenum disulfide (MoS2) thin-film transistors (TFTs) and their temperature-dependent electrical properties, especially at a high temperature range from 293 K to 380 K. With the aid of ultraviolet-ozone treatment, an Al2O3 layer was uniformly applied to cover the entire surface of MoS2 TFTs. Our Al2O3-passivated MoS2 TFTs exhibited not only a dramatic reduction of hysteresis but also enhancement of current in output characteristics. In addition, we investigated the temperature-dependent behaviors of the TFT performance, including intrinsic carrier mobility based on the Y-function method. |
| first_indexed | 2024-12-11T18:36:49Z |
| format | Article |
| id | doaj.art-161a6c1b626644eb879d6ea1d5211afc |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-12-11T18:36:49Z |
| publishDate | 2018-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-161a6c1b626644eb879d6ea1d5211afc2022-12-22T00:54:44ZengMDPI AGApplied Sciences2076-34172018-03-018342410.3390/app8030424app8030424Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film TransistorsSeok Hwan Jeong0Na Liu1Heekyeong Park2Young Ki Hong3Sunkook Kim4School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do 16419, KoreaSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do 16419, KoreaSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do 16419, KoreaSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do 16419, KoreaSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do 16419, KoreaIt is becoming more important for electronic devices to operate stably and reproducibly under harsh environments, such as extremely low and/or high temperatures, for robust and practical applications. Here, we report on the effects of atomic-layer-deposited (ALD) aluminum oxide (Al2O3) passivation on multilayer molybdenum disulfide (MoS2) thin-film transistors (TFTs) and their temperature-dependent electrical properties, especially at a high temperature range from 293 K to 380 K. With the aid of ultraviolet-ozone treatment, an Al2O3 layer was uniformly applied to cover the entire surface of MoS2 TFTs. Our Al2O3-passivated MoS2 TFTs exhibited not only a dramatic reduction of hysteresis but also enhancement of current in output characteristics. In addition, we investigated the temperature-dependent behaviors of the TFT performance, including intrinsic carrier mobility based on the Y-function method.http://www.mdpi.com/2076-3417/8/3/424transition metal dichalcogenidemolybdenum disulfidethin-film transistorpassivationcontact resistanceintrinsic mobility |
| spellingShingle | Seok Hwan Jeong Na Liu Heekyeong Park Young Ki Hong Sunkook Kim Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors Applied Sciences transition metal dichalcogenide molybdenum disulfide thin-film transistor passivation contact resistance intrinsic mobility |
| title | Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors |
| title_full | Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors |
| title_fullStr | Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors |
| title_full_unstemmed | Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors |
| title_short | Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors |
| title_sort | temperature dependent electrical properties of al2o3 passivated multilayer mos2 thin film transistors |
| topic | transition metal dichalcogenide molybdenum disulfide thin-film transistor passivation contact resistance intrinsic mobility |
| url | http://www.mdpi.com/2076-3417/8/3/424 |
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