High-Q Transformer Neutralization Technique for W-Band Dual-Band LNA Using 0.1 μm GaAs pHEMT Technology
In this study, a dual-band low-noise amplifier (LNA) was implemented by applying a transformer-based neutralization technology to the W-band. Incorporating the neutralization technique was difficult owing to performance degradation in the W-band. However, circuit performance was enhanced thanks to t...
Main Authors: | Taejoo Sim, Dong-min Lee, Wansik Kim, Kichul Kim, Jeung Won Choi, Min-Su Kim, Junghyun Kim |
---|---|
Format: | Article |
Language: | English |
Published: |
The Korean Institute of Electromagnetic Engineering and Science
2023-11-01
|
Series: | Journal of Electromagnetic Engineering and Science |
Subjects: | |
Online Access: | https://www.jees.kr/upload/pdf/jees-2023-6-r-193.pdf |
Similar Items
-
Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA
by: Qian Lin, et al.
Published: (2022-07-01) -
Failure Mechanism of pHEMT in Navigation LNA under UWB EMP
by: Yonglong Li, et al.
Published: (2022-12-01) -
The design of a DC-30 GHz GaAs pHEMT distributed power amplifier
by: Liu Yanpeng, et al.
Published: (2018-10-01) -
Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
by: Igor M. Dobush, et al.
Published: (2021-11-01) -
A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs pHEMTs
by: Ruirui Dang, et al.
Published: (2019-02-01)