Ultraviolet emission from low resistance Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires

Ultraviolet emission from low resistance Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires

SnO2 and Sn:In2O3 nanowires were grown on Si(001), and p-n junctions were fabricated in contact with p-type Cu2S which exhibited rectifying current–voltage characteristics. Core-shell Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires were obtained by depositing copper and post-growth processing under H2S b...

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Bibliographic Details
Main Authors:	E. Karageorgou, M. Zervos, A. Othonos
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2014-11-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/1.4901295

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