Responsivity, Rise Time for Bi2O3 /Si Photo Detector
In the present work, three different active layer thicknesses of Bi2O3 filmswas employ for fabricated n-Bi2O3/p-Si heterojunction detector, using reactive pulse laser deposition technique as preparation method, detector parameter was carried out,responsivity, detectivity quantum efficiency and rise...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2014-01-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_102291_45216707850b5ecdaa45911c792d8791.pdf |
| Summary: | In the present work, three different active layer thicknesses of Bi2O3 filmswas employ for fabricated n-Bi2O3/p-Si heterojunction detector, using reactive pulse laser deposition technique as preparation method, detector parameter was carried out,responsivity, detectivity quantum efficiency and rise time in order to investigated the performance of the fabricated devise |
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| ISSN: | 1681-6900 2412-0758 |